Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology

A process for the formation of a grid structure around an electron emitter, said process comprising the following steps:

• forming at least one cathode on a substrate;
• forming at least one insulating layer superjacent said cathode;
• depositing at least one conductive material layer superjacent said insulating layer;
• planarizing said layers by chemical mechanical planarization (CMP);
• and
• removing said layers to expose at least a portion of said cathode, wherein at least one of said layers comprises at least one of a conformal material and a non-conformal material.

A process for the formation of self-aligned gate structures around an electron emitting tip, said process comprising the following steps:

• forming at least one cathode on a substrate, said cathode having an emitter tip;
• forming a first layer superjacent said emitter tip;
• depositing a second layer superjacent said first layer, wherein at least one of said first and second layer comprise at least one of a conformal material and a non-conformal material;
• polishing said substrate by chemical mechanical means to expose at least a portion of said second layer, wherein said chemical mechanical means comprises an abrasive compound in a polishing slurry;
• and
• selectively removing said layers to expose the emitter tip, wherein said first layer is selectively removed by etching, said first layer being selectively etchable with respect to said second layer.