US 5,372,648 A · Plasma CVD system

Abstract

A plasma CVD system has a processing chamber having a thin film forming section, and a transfer section communicating with the thin film forming section through a connecting opening. The system includes a thin film forming device, located in the thin film forming section, for producing plasma to form a thin film on a substrate at the connecting opening, a transfer device, located in the transfer section, for bringing a substrate holding member into and out of the processing chamber, and a heat transfer plate which does not project beyond the edge of the substrate when moved into abutment against a rear face of the substrate held by the substrate holding member to move the substrate from the substrate holding member towards the thin film forming section. The heat transfer plate also conducts heat to the substrate.

Claims9

Dependent claims

A plasma CVD system comprising:

a processing chamber having a thin film forming section and a transfer section communicating with the thin film forming section through a connecting opening;
reaction gas introduction piping open to the interior of said thin film forming section;
an electrode located in the thin film forming section;
a substrate holding member which supports a substrate;
a transfer device, located in the transfer section, for bringing the substrate holding member into and out of the processing chamber;
a heat transfer plate;
and
drive means for moving said heat transfer plate into abutment with a rear surface of a substrate held by the substrate holding member so that the heat transfer plate will conduct heat to the substrate and for moving the heat transfer plate from the substrate holding member towards said thin film forming section to move the substrate to the thin film forming section.

5 more elements

Dependencies are inferred from the claim text.

Plasma CVD system

Life of this patent

Plasma CVD system

Life of this patent

Abstract

Claims9