Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
AssigneeCalifornia Micro Devices Corporation
InventorsChan M. Desaigoudar, Suren Gupta
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AssigneeCalifornia Micro Devices Corporation
InventorsChan M. Desaigoudar, Suren Gupta
Estimating the term…
The fabrication of thin film inductors on a substrate, which may include thin film resistors, thin film capacitors, and semiconductor devices. In one embodiment an inductor is fabricated initially on a substrate and then integrated with other devices subsequently formed on the substrate. In this embodiment, process steps used to fabricate such other devices utilize temperatures sufficiently low to prevent damaging or destroying the characteristics of the inductor. In another embodiment the fabrication of an inductor is achieved through photoresist masking and plating techniques. In alternative embodiments, fabrication of an inductor is achieved by sputtering, photoresist processes and etching/ion-milling techniques. A combination of various individual process steps from various embodiments are suitable for use to fabricate the individual layers to achieve a structure of this invention. The inductor fabricated in accordance with this invention is connected to other passive or active components through metal interconnections in order to improve the frequency performance of the inductor. In certain embodiments, parasitic capacitance of the inductor is significantly reduced by fabricating inductor coils on dielectric bridges. In certain embodiments, a magnetic core of ferromagnetic material is used to improve the performance of the inductor at frequencies below about 100 MHz.
A method for fabricating an electronic device comprising the steps of:
A method for fabricating an electronic device utilizing a substrate comprising the steps of:
A method as in 62 wherein said step of forming a layer of passivation comprises the step of forming a layer of photoresist.
A method as in 63 wherein said step of forming a layer of photoresist comprises forming a layer of photoresist to a thickness within the range of approximately 1 to 5 microns.
Dependencies are inferred from the claim text.