Bonded wafer processing
AssigneeHarris Corporation
InventorsJack H. Linn, Robert K. Lowry, George V. Rouse, James F. Buller, William H. Speece
Life of this patent
Estimating the term…
Abstract
Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.
Claims26
A method of wafer bonding, comprising the steps of:
- (a) providing a device wafer and a handle wafer;
- (b) joining a surface of said device wafer to a surface of said handle wafer with a liquid quantity of oxidant therebetween;
- (c) heating said wafers in the range of about 800.degree.-1000.degree. C. wherein said wafers bond together.
A method of wafer bonding, comprising the steps of:
- (a) providing a device wafer and a handle wafer;
- (b) joining a surface of said device wafer to a surface of said handle wafer with a liquid oxidant therebetween, said oxidant including dopants which can be electrical active in said device wafer;
- and
- (c) heating said wafers wherein said wafers bond together and some of said dopants pass into said device wafer.
A method of wafer bonding, comprising the steps of:
- (a) providing a device wafer and a handle wafer;
- (b) joining a surface of said device wafer to a surface of said handle wafer with a quantity of liquid oxidant therebetween, wherein only one of said two surfaces comprises a dielectric layer;
- (c) heating said wafers in the range of about 800.degree.-1000.degree. C. wherein said wafers bond together.
Dependencies are inferred from the claim text.