Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
AssigneeEaton Corporation
InventorsJoseph A. Calviello, Grayce A. Hickman
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Abstract
A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating buffer layer is epitaxially grown on the ceramic substrate and has an elastically transitional lattice constant matching at its lower surface the lattice constant of the ceramic substrate, and matching at its upper surface the lattice constant of the semiconductor layer.
Claims6
A semiconductor processing technique for depositing a single crystal compound semiconductor layer on a ceramic substrate, comprising:
- providing a ceramic substrate;
- growing a superlattice-strained-structure of sequential layers of CaF.sub.2 and SrF.sub.2 on said substrate;
- epitaxially growing a compound element semiconductor layer on said superlattice-strained-structure.
A semiconductor processing technique for depositing a single crystal compound semiconductor layer on a ceramic substrate, comprising:
- providing a ceramic substrate;
- providing a superlattice-strained-structure of sequential layers of CaF.sub.2, SrF.sub.2, and BaF.sub.2 on said substrate;
- epitaxially growing a compound element semiconductor layer on said superlattice-strained-structure.
Dependencies are inferred from the claim text.