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US 5,354,707 AGranted
Method of making semiconductor quantum dot light emitting/detecting devices
AssigneeInternational Business Machines Corporation
InventorsJonathan D. Chapple-Sokol, Seshadri Subbanna, Manu J. Tejwani
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Abstract
A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.
Claims12
A method of fabricating a semiconductor light emitting/detecting device, comprising the steps of:
- a) providing a first doped silicon layer of a first conductivity type;
- b) forming a first intrinsic silicon epitaxial layer on said first doped silicon layer;
- c) forming at least one quantum dot on said intrinsic silicon epitaxial layer;
- d) forming a second intrinsic silicon epitaxial layer on said first intrinsic silicon epitaxial layer and over said at least one quantum dot so as to embed said at least one quantum dot therein;
- e) forming a second doped silicon layer of a second conductivity type on said second intrinsic silicon epitaxial layer;
- and
- f) defining a light emitting/detecting device with said layers and said at least one quantum dot.
4 more elements
Dependencies are inferred from the claim text.