Method of making highly doped surface layer for negative electron affinity devices
AssigneeITT Corporation
InventorsRobert J. Field, Michael E. Givens, Mary A. Whisenant
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Abstract
A negative electron affinity device has acceptor dopant concentration increased proximate the emitter face of the III-V semiconductor layer and within the depletion zone effected by an overlying CsO negative electron affinity coating. Methods to accomplish dopant concentration include diffusion, ion implantation and doping during crystal growth.
Claims11
A method for increasing the photoresponse of a negative electron affinity device having a semiconductor layer doped with an electron acceptor dopant, said semiconductor layer having an emitter face having a negative electron affinity coating thereover, said coating setting up a depletion band in said semiconductor layer, comprising the steps of:
- doping said semiconductor layer in a manner such that said diopant has an increased concentration with respect to said electron acceptor dopant concentration proximate said emitter face within said depletion band.
Dependencies are inferred from the claim text.