Plasma immersion ion implantation (PI.sup.3) apparatus

In a non-raster scan implantation apparatus comprising,

• a vacuum chamber, said chamber having walls, one said wall having mounted therein an electrode, said electrode having at least one planar surface to support a wafer thereon for implantation of positive ions into said wafer;
• an electron source for neutralizing a positive charge on said wafer, said electron source being mounted in said chamber for providing a large cross sectional area flow of electrons toward said planar surface of said electrode;
• means to provide a source of ionizable gas to said chamber, said gas containing a desired dopant for implantation into said wafer;
• means for providing a first and second high voltage pulse, said first high voltage pulse being connected between said electrode and said chamber for creating a cold cathode ionizing field to produce positive ions from said ionizable gas of said dopant and for accelerating said dopant toward said electrode, and wherein said second high voltage pulse is connected between said electron source and said chamber for providing electrons from said electron source in response to said second pulse;
• and
• synchronizing trigger means, said synchronizing trigger means being connected to said means for providing said first and second high voltage pulse for permitting a synchronizing relationship between said first and second high voltage pulses.