# US 5,353,382 A · Programmable synapse for neural network applications > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,353,382 A - Document ID: US5353382A - Status: Granted - Kind: A - Application number: 07/597,390 - Filed: 1990-10-15 - Granted: 1994-10-04 - Earliest claimed: 1990-10-15 - Assignees: California Institute of Technology - Inventors: Amnon Yariv; Charles F. Neugebauer; Aharon J. Agranat - Web page: https://patentgrep.com/patent/US5353382A ## CPC - G06N 3/063: using electronic means - G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS ## Abstract A synapse for neural network applications providing four quadrant feed-forward and feed-back modes in addition to an outer-product learning capability allowing learning in-situ. The invention, in its preferred embodiment, utilizes a novel two-transistor implementation which permits each synapse to be built in an integrated circuit chip surface area of only 20 by 20 micrometers. One of the two transistors at each synapse of the present invention comprises a floating gate structure composed of a floating gate electrode and a control electrode which permits learning upon application of incident ultraviolet light. During ultraviolet light application, a floating gate electrode voltage may be altered to modify the weight of each synapse in accordance with preselected criteria, based upon the input and output weight change vector elements corresponding to that particular matrix element. The second transistor corresponding to each synapse of the present invention provides a novel method for applying a voltage to the control electrode of the aforementioned floating gate structure of the first transistor. The voltage applied to the control electrode and thus the proportionate change in the floating gate electrode of the first transistor may be made proportional to the product of the corresponding input weight change vector element and the corresponding output weight change vector element, by using slope controllable ramp generators and phase controllable pulse generators, only one set of which must be provided for the entire matrix of synapses herein disclosed. ## Claims ### Claim 1 In a vector-matrix multiplier of the type having a plurality of input lines and output lines corresponding to elements of input and output vectors, respectively, and a plurality of matrix elements, one such respective matrix element corresponding to each combination of a respective input line and a respective output line; each such matrix element comprising a single transistor operating in its triode region, having a drain-source difference voltage proportional to the value of said input vector element corresponding to said matrix element, having a gate-voltage proportional to the value of said matrix element and having a drain current proportional to the product of said input vector element value and said matrix element value; each such output line being connected to a plurality of matrix elements such that said drain currents proportional to the product of said input line values and said matrix element values are summed to form a total output line current proportional to one element of said output vector; and a programmable plurality of said matrix elements having constant values and providing an offset drain current in their common output line; said offset drain current being subtracted from each respective drain current in the remaining ones of said output lines for providing four quadrant vector-matrix multiplication. ### Claim 2 (depends on 1) The multiplier recited in claim 1, wherein each said single transistor comprises a floating gate electrode and a control electrode, the voltage at said floating gate electrode being dependent upon the voltage applied to said control electrode when ultraviolet light is applied to said transistor and remaining constant upon the removal of said ultraviolet light. ### Claim 3 (depends on 2) The multiplier recited in claim 2 wherein each said matrix element comprises an additional transistor connected to the control electrode for altering the gate-voltage of said single transistor. ### Claim 4 (depends on 3) The multiplier recited in claim 3 further comprising means for applying an adjustable-slope-ramp drain voltage to said additional transistor and an adjustable-phase-pulse, gate-voltage to said additional transistor, the slope of said ramp voltage being dependent upon the value of the corresponding element of an output weight change vector and the relative phase of said gate-voltage being dependent upon the value of the corresponding element of an input weight change vector. ### Claim 5 (depends on 1) The multiplier recited in claim 1 wherein each said matrix element comprises an additional transistor connected to the gate electrode of said single transistor for applying a gate-voltage thereto. ### Claim 6 (depends on 5) The multiplier recited in claim 5 further comprising means for applying an adjustable-slope-ramp drain voltage to said additional transistor and an adjustable-phase-pulse, gate-voltage to said additional transistor, the slope of said ramp voltage being dependent upon the value of the corresponding element of an output weight change vector and the relative phase of said gate-voltage being dependent upon the value of the corresponding element of an input weight change vector. ### Claim 7 (depends on 1) The multiplier recited in claim 1 further comprising means for modifying the gate-voltage of each such matrix element transistor in proportion to the outer product of an input weight change vector and an output weight change vector corresponding to each such matrix element after each vector-matrix multiplication. ### Claim 8 A vector-matrix multiplier of the type having a plurality of input lines and output lines corresponding to elements of input and output vectors, respectively, and a plurality of matrix elements, one such respective matrix element corresponding to each combination of a respective input line and a respective output line; each such matrix element comprising a single transistor operating in its triode region, having a drain-source difference voltage proportional to the value of said input vector element corresponding to said matrix element, having a gate-voltage proportional to the value of said matrix element and having a drain current proportional to the product of said input vector element value and said matrix element value; each such output line being connected to a plurality of matrix elements such that said drain currents proportional to the product of said input line values and said matrix element values are summed to form a total output line current proportional to one element of said output vector; and each said single transistor comprising a floating gate electrode and a control electrode, the voltage at said floating gate electrode being dependent upon the voltage applied to said control electrode when ultraviolet light is applied to said transistor and remaining constant upon the removal of said ultraviolet light. ### Claim 9 (depends on 8) The multiplier recited in claim 8 wherein each said matrix element comprises an additional transistor connected to the control electrode of said single transistor for applying a gate-voltage thereto. ### Claim 10 (depends on 9) The multiplier recited in claim 9 further comprising means for applying an adjustable-slope-ramp drain voltage to said additional transistor and an adjustable-phase-pulse, gate-voltage to said additional transistor, the slope of said ramp voltage being dependent upon the value of the corresponding element of an output weight change vector and the relative phase of said gate-voltage being dependent upon the value of the corresponding element of an input weight change vector. ### Claim 11 (depends on 8) The multiplier recited in claim 8 wherein each said matrix element comprises an additional transistor connected to the control electrode of said single transistor for altering the gate-voltage of said single transistor. ### Claim 12 (depends on 11) The multiplier recited in claim 11 further comprising means for applying an adjustable-slope-ramp drain voltage to said additional transistor and an adjustable-phase-pulse, gate-voltage to said additional transistor, the slope of said ramp voltage being dependent upon the value of the corresponding element of an output weight change vector and the relative phase of said gate-voltage being dependent upon the value of the corresponding element of an input weight change vector. ### Claim 13 (depends on 8) The multiplier recited in claim 8 further comprising means for modifying the gate-voltage of each such matrix element transistor in proportion to the product of an input weight change vector element and output weight change vector element corresponding to each such matrix element. ### Claim 14 A vector-matrix multiplier of the type having a plurality of input lines and output lines, and a plurality of matrix elements, one such respective matrix element corresponding to each combination of a respective input line and a respective output line; each such matrix element comprising a single transistor operating in its triode region, having a drain-source difference voltage proportional to the value of said input vector element corresponding to said matrix element, having a gate-voltage proportional to the value of said matrix element and having a drain current proportional to the product of said input vector element value and said matrix element value; each such output line being connected to a plurality of matrix elements such that said drain currents proportional to the product of said input line values and said matrix element values are summed to form a total output line current proportional to one element of said output vector; a programmable plurality of said matrix elements having constant values and providing a single drain current in their common output line; said single drain current being subtracted from the current in each respective remaining one of said output lines for providing four quadrant vector-matrix multiplication; each such single transistor comprising a floating gate electrode and a control electrode, the voltage of the gate of said single transistor being equal to the voltage of said floating gate electrode, the voltage of said floating gate electrode being dependent upon the voltage applied to said control electrode when ultraviolet light is applied to said transistor, said floating gate electrode voltage remaining constant upon the removal of said ultraviolet light; each said matrix element comprising an additional transistor connected to the control electrode of said single transistor for altering the gate-voltage of said single transistor; means for applying an adjustable-slope-ramp drain voltage to said additional transistor and an adjustable-phase-pulse, gate-voltage to said additional transistor, the slope of said ramp voltage being dependent upon the value of the corresponding element of an output weight change vector and the relative phase of said gate-voltage being dependent upon the value of the corresponding element of an input weight change vector; and wherein each such matrix element constitutes synapse in a neural network.