# US 5,353,324 A · Total reflection X-ray diffraction micrographic method and apparatus

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- Number: US 5,353,324 A
- Document ID: US5353324A
- Status: Granted
- Kind: A
- Application number: 07/865,269
- Filed: 1992-04-08
- Granted: 1994-10-04
- Earliest claimed: 1991-04-22
- Assignees: NEC Corporation
- Inventors: Tomohisa Kitano
- Web page: https://patentgrep.com/patent/US5353324A

## CPC

- G01N 23/207: Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A method for detecting and evaluating crystal defects existing in the extreme neighborhood of the surface of a crystal specimen through the use of X-ray analyzing micrography. Synchrotron radiation is used as the X-ray source. A monochromatic X-ray beam generated from the synchrotron radiation is directed into the crystal specimen at a glancing angle smaller than the critical angle of said crystal specimen relative to said monochromatic X-ray beam. The diffracted X-rays from the crystal specimen due to asymmetrical reflection are detected in order to observe the resulting diffracted image.

## Claims

### Claim 1

A total reflection X-ray diffraction micrographic method of detecting and evaluating defects present within a crystal specimen comprising the steps of:
utilizing continuous wavelength spectrum synchrotron radiation;
making said synchrotron radiation monochromatic in order to generate monochromatic X-ray beam;
directing said monochromatic X-ray beam first into said crystal specimen at a glancing angle greater than the critical angle of said crystal specimen relative to said monochromatic X-ray beam, and then directing said monochromatic X-ray beam into said crystal specimen at a glancing angle smaller than said critical angle by turning said crystal specimen and by successively changing the wavelength of the monochromatic X-ray while continuously satisfying Bragg's condition; and
detecting diffracted X-rays from said crystal specimen due to asymmetrical reflection in order to observe the resulting diffracted image.

### Claim 2 (depends on 1)

A total reflection X-ray diffraction micrographic method as set forth in claim 1 wherein said crystal specimen is retained by a goniometer which has two rotatable components, one of said components being able to turn by an angle of .theta. in the same time that the other turns by an angle of 2.theta..

### Claim 3 (depends on 2)

A total reflection X-ray diffraction micrographic method as set forth in claim 2 wherein said monochromatic X-ray beam is produced by making said synchrotron radiation monochromatic by means of a goniometer provided with a spectroscopic analyzing crystal.

### Claim 4 (depends on 2)

A total reflection X-ray diffraction micrographic method as set forth in claim 2 wherein said crystal specimen is a semiconductor wafer used for making a semiconductor device.

### Claim 5 (depends on 4)

A total reflection X-ray diffraction micrographic method as set forth in claim 4 wherein said semiconductor wafer is a silicon (100) wafer.

### Claim 6 (depends on 5)

A total reflection X-ray diffraction micrographic method as set forth in claim 5 wherein said diffracted X-rays are produced by asymmetric reflection of said monochromatic X-ray beam by a silicon (311) plane.

### Claim 7 (depends on 5)

A total reflection X-ray diffracted micrographic method as set forth in claim 5 wherein said diffracted X-rays are produced by asymmetric reflection of said monochromatic X-ray beam by a silicon (422) plane.