# US 5,353,139 A · Spatial light modulator with photoconductor of hydrogenated amorphous silicon with 0.1-1.0 ppm boron

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- Number: US 5,353,139 A
- Document ID: US5353139A
- Status: Granted
- Kind: A
- Application number: 07/977,613
- Filed: 1992-11-17
- Granted: 1994-10-04
- Earliest claimed: 1991-11-22
- Assignees: Victor Company of Japan, Ltd.
- Inventors: Nozomu Ohkouchi; Hiromitsu Takenaka; Tadayuki Shimada; Shigeo Shimizu; Toshio Konno
- Web page: https://patentgrep.com/patent/US5353139A

## CPC

- G02F 1/1354: {having a particular photoconducting structure or material}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A spatial light modulator capable of providing high contrast ratio and resolution moving pictures without an after-image effect is disclosed. The spatial light modulator comprises a pair of transparent electrodes for forming a driving electric field therebetween, and at least one photo-modulation member and a photoconductive member laminated between the pair of transparent electrodes, where the photoconductive member comprises a hydrogenated amorphous silicon film having thickness of 10 .mu.m to 30 .mu.m, and is doped with boron as such that an amount of the boron in the hydrogenated amorphous silicon film in atomic ratio with respect to silicon therein is 0.1 ppm to 1 ppm.

## Claims

### Claim 1

A spatial light modulator having a pair of transparent electrodes for forming a driving electric field therebetween and at least one photoconductive member and a photo-modulation member laminated between said pair of transparent electrodes, wherein;
said photoconductive member comprises a hydrogenated amorphous silicon film having thickness of 10 .mu.m to 30 .mu.m; and
said photoconductive member is doped with boron as such that an amount of the boron in said hydrogenated amorphous silicon film in atomic ratio with respect to silicon in said hydrogenated amorphous silicon film is above 0.1 ppm and less than 1 ppm.

### Claim 2 (depends on 1)

A spatial light modulator as defined in claim 1, wherein the concentration of said boron in said hydrogenated amorphous silicon film in atomic ratio with respect to silicon is between 0.15 ppm and 0.5 ppm inclusive.