# US 5,352,998 A · Microwave integrated circuit having a passive circuit substrate mounted on a semiconductor circuit substrate

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- Number: US 5,352,998 A
- Document ID: US5352998A
- Status: Granted
- Kind: A
- Application number: 08/130,555
- Filed: 1993-10-01
- Granted: 1994-10-04
- Earliest claimed: 1992-10-09
- Assignees: Mitsubishi Denki Kabushiki Kaisha
- Inventors: Noriyuki Tanino
- Web page: https://patentgrep.com/patent/US5352998A

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/42: Vias, e.g. via plugs
- H10W 44/00: Electrical arrangements for controlling or matching impedance
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 44/401: {Resistive arrangements (H10W44/20, H10W42/80 take precedence)}
- H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)}
- H10W 44/601: {Capacitive arrangements (H10W44/20 takes precedence)}
- H10W 90/00: Package configurations
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 90/737: {between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- Y10T 29/49126: Assembling bases
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A microwave integrated circuit includes a semiconductor substrate having semiconductor elements, such as transistors, diodes, resistors, and the like, and a passive circuit substrate having passive circuit elements, such as microstrip or coplanar transmission lines, spiral inductors, capacitances, and the like, on its front surface. The passive circuit substrate is mounted on the semiconductor substrate so that the rear surface of the passive circuit substrate faces the surface of the semiconductor substrate on which the semiconductor elements are present, and the semiconductor elements are electrically connected to the elements or grounding conductors of the passive circuit substrate via through-holes or bumps. The passive circuit substrate includes a thin dielectric film having less dielectric loss than the semiconductor substrate, and the passive circuit elements, especially the transmission lines, are disposed on the dielectric substrate. Therefore, the transmission lines have a very small loss in a range from microwave to millimeter-wave frequency bands.

## Claims

### Claim 1

A microwave integrated circuit comprising:
a passive circuit substrate comprising a thin dielectric film having opposite first and second surfaces, a thin conductive film disposed on the second surface of said thin dielectric film, passive circuit elements having respective terminals disposed on the first surface of said thin dielectric film, the passive circuit elements including at least microstrip lines with said thin conductive film as a grounding conductor, openings penetrating through prescribed portions of said thin conductive film, and through-hole conductors having respective first and second ends and penetrating through portions of said thin conductive film, the first end of each through-hole conductor protruding from a corresponding opening of said thin conductive film and the second end contacting one of a terminal and a grounding conductor of a passive circuit element; and
a semiconductor circuit substrate comprising a semiconductor substrate having opposite first and second surfaces, a thin conductive film disposed on the second surface of the semiconductor substrate, and active circuit elements having respective electrodes disposed on the first surface of the semiconductor substrate, wherein the passive circuit substrate is mounted on said semiconductor circuit substrate with the second surface of said passive circuit substrate facing the first surface of said semiconductor circuit substrate so that said through-hole conductors are electrically connected to electrodes of said active circuit elements.

### Claim 2 (depends on 1)

The microwave integrated circuit of claim 1 wherein said dielectric film comprises polyimide.

### Claim 3 (depends on 1)

The microwave integrated circuit of claim 1 comprising at least two transistors to which identical gate bias and drain bias voltages are applied.

### Claim 4 (depends on 1)

The microwave integrated circuit of claim 1 wherein said semiconductor substrate has a thickness ranging from 20 microns to 200 microns.

### Claim 5 (depends on 1)

The microwave integrated circuit of claim 1 including a heat sink on which said semiconductor circuit substrate is disposed.

### Claim 6

A method of producing a microwave integrated circuit comprising:
preparing a dielectric substrate having opposite first and second surfaces;
forming a thin conductive film on the second surface of said dielectric substrate;
forming passive circuit elements having respective terminals on the first surface of said dielectric substrate, the passive circuit elements including at least microstrip lines with said thin conductive film as a grounding conductor;
forming openings penetrating through prescribed portions of said thin conductive film;
forming through-hole conductors having respective first and second ends penetrating through portions of said thin conductive film so that the first end of each through-hole conductor protrudes from a corresponding opening of said thin conductive film and the second end is in contact with one of a terminal and a grounding conductor of said passive circuit element;
preparing a semiconductor substrate having opposite first and second surfaces;
depositing a thin conductive film on the second surface of said semiconductor substrate;
forming active circuit elements having respective electrodes on the first surface of said semiconductor substrate;
attaching a heat sink to the second surface of the semiconductor substrate; and
mounting said dielectric substrate on said semiconductor substrate with the second surface of said dielectric substrate facing the first surface of said semiconductor substrate and electrically connecting said through-hole conductors to electrodes of said active circuit elements.

### Claim 7

A microwave integrated circuit comprising:
a passive circuit substrate comprising a thin dielectric film having opposite first and second surfaces, a thin conductive film disposed on the second surface of said thin dielectric film, passive circuit elements having respective terminals disposed on the first surface of said thin dielectric film, the passive circuit elements including at least coplanar transmission lines with said thin conductive film as a grounding conductor, openings penetrating through prescribed portions of said thin conductive film, and through-hole conductors having respective first and second ends and penetrating through portions of said thin conductive film, the first end of each through-hole conductor protruding from a corresponding opening of said thin conductive film and the second end contacting one of a terminal and a grounding conductor of a passive circuit element; and
a semiconductor circuit substrate comprising a semiconductor substrate having opposite first and second surfaces, a thin conductive film disposed on the second surface of the semiconductor substrate, and active circuit elements having respective electrodes disposed on the first surface of the semiconductor substrate, wherein the passive circuit substrate is mounted on said semiconductor circuit substrate with the second surface of said passive circuit substrate facing the first surface of said semiconductor circuit substrate so that said though-hole conductors are electrically connected to electrodes of said active circuit elements.

### Claim 8 (depends on 7)

The microwave integrated circuit of claim 7 wherein said dielectric film comprises polyimide.

### Claim 9 (depends on 7)

The microwave integrated circuit of claim 7 comprising at least two transistors to which identical gate bias and drain bias voltages are applied.

### Claim 10 (depends on 7)

The microwave integrated circuit of claim 7 wherein said semiconductor substrate has a thickness ranging from 20 microns to 200 microns.

### Claim 11 (depends on 7)

The microwave integrated circuit of claim 7 including a heat sink on which said semiconductor circuit substrate is disposed.

### Claim 12

A method of producing a microwave integrated circuit comprising:
preparing a dielectric substrate having opposite first and second surfaces;
forming a thin conductive film on the second surface of said dielectric substrate;
forming passive circuit elements having respective terminals on the first surface of said dielectric substrate, the passive circuit elements including at least coplanar transmission lines with said thin conductive film as a grounding conductor;
forming openings penetrating through prescribed portions of said thin conductive film;
forming through-hole conductors having respective first and second ends penetrating through portions of said thin conductive film so that the first end of each through-hole conductor protrudes from a corresponding opening of said thin conductive film and the second end is in contact with one of a terminal and a grounding conductor of a passive circuit element;
preparing a semiconductor substrate having opposite first and second surfaces;
depositing a thin conductive film on the second surface of said semiconductor substrate;
forming active circuit elements having respective electrodes on the first surface of said semiconductor substrate:
attaching a heat sink to the second surface of said semiconductor substrate; and
mounting said dielectric substrate on said semiconductor substrate with the second surface of said dielectric substrate facing the first surface of said semiconductor substrate and electrically connecting said through-hole conductors to electrodes of said active circuit elements.