# US 5,352,919 A · Optical integrated semiconductor device

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- Number: US 5,352,919 A
- Document ID: US5352919A
- Status: Granted
- Kind: A
- Application number: 08/148,367
- Filed: 1993-11-08
- Granted: 1994-10-04
- Earliest claimed: 1992-11-13
- Assignees: NEC Corporation
- Inventors: Shinji Takano
- Web page: https://patentgrep.com/patent/US5352919A

## CPC

- G02B 6/124: Geodesic lenses or integrated gratings
- G02B 6/12004: {Combinations of two or more optical elements}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H10F 77/70: Surface textures, e.g. pyramid structures
- H10F 77/703: {of the semiconductor bodies, e.g. textured active layers}
- Y02E 10/50: Photovoltaic [PV] energy
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

An optical integrated semiconductor device includes a semiconductor substrate, a diffraction grating formed on the semiconductor substrate, an optical waveguide layer deposited on the semiconductor substrate, and at least one of a light-emitting element and a light-detecting element formed on the semiconductor substrate. At least one of the thickness and refractive index of the optical waveguide layer has a value which varies depending on the position in the semiconductor substrate. The optical waveguide layer, the light-emitting element, and the light-detecting element are preferably formed by selective area growth employing vapor-phase epitaxy. The diffraction grating preferably has a constant period. Preferably, the semiconductor substrate is made of InP and the optical waveguide layer is made of In.sub.X Ga.sub.1-X As.sub.y P.sub.1-Y where X and Y have values ranging from 0 to 1.

## Claims

### Claim 1

An optical integrated semiconductor device comprising:
a semiconductor substrate;
a diffraction grating formed on said semiconductor substrate;
an optical waveguide layer deposited on said semiconductor substrate; and
at least one of a light-emitting element and a light-detecting element formed on said semiconductor substrate;
said optical waveguide layer having a thickness and a refractive index in a region where said diffraction grating is formed on said semiconductor substrate, at least one of said thickness and said refractive index having a value which varies along an optical path in said diffraction grating formed on said semiconductor substrate.

### Claim 2 (depends on 1)

The optical integrated semiconductor device according to claim 1, wherein said optical waveguide layer, said light-emitting element, and said light-detecting element are formed by selective area growth employing vapor-phase epitaxy.

### Claim 3 (depends on 1)

The optical integrated semiconductor device according to claim 1, wherein said diffraction grating has a constant period.

### Claim 4 (depends on 1)

The optical integrated semiconductor device according to claim 1, wherein said semiconductor substrate is made of indium phosphide InP and said optical waveguide layer is made of indium gallium arsenide phosphide In.sub.X Ga.sub.1-X As.sub.Y P.sub.1-Y where X and Y have values ranging from 0 to 1.