# US 5,352,917 A · Electronic device provided with metal fluoride film

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- Number: US 5,352,917 A
- Document ID: US5352917A
- Status: Granted
- Kind: A
- Application number: 07/966,052
- Filed: 1993-01-04
- Granted: 1994-10-04
- Earliest claimed: 1990-07-04
- Inventors: Tadahiro Ohmi
- Web page: https://patentgrep.com/patent/US5352917A

## CPC

- H10P 14/68: Organic materials, e.g. photoresists
- H10D 64/01336: {on single crystalline silicon, e.g. chemical oxidation using a liquid}
- H10D 64/025: {forming recessed gates, e.g. by using local oxidation}
- H10D 64/027: {by etching at gate locations}
- H10D 64/68: characterised by the insulator, e.g. by the gate insulator
- H10D 84/0181: {Manufacturing their gate insulating layers}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/6923: {the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electronic device provided with a metal fluoride film which can be formed at a low temperature with a high processing accuracy, characterized in that the metal fluoride film is used in at least part of an insulting film.

## Claims

### Claim 1

A semiconductor device comprising a metal fluoride film in at least part of an insulating film.

### Claim 2 (depends on 1)

The semiconductor device of claim 1 wherein said insulating film is a MOS interlinear insulating film.

### Claim 3 (depends on 1)

The semiconductor device of claim 1 wherein said insulating film is an insulating film which insulates and separates between a gate electrode and a source and/or a drain electrode.

### Claim 4 (depends on 1)

The semiconductor device of claim 1 wherein said metal fluoride film is a fluoride film used as a mask for etching.

### Claim 5 (depends on 1)

The semiconductor device of claim 1 wherein said metal fluoride film is a mixed film of magnesium fluoride and aluminum fluoride.

### Claim 6 (depends on 5)

The semiconductor device of claim 5 wherein said metal fluoride film is a film formed by direct fluoridation of aluminum containing magnesium.

### Claim 7 (depends on 6)

The semiconductor device of claim 6 wherein said aluminum containing magnesium contains an amount of magnesium within a range of 0.02-5 wt %.

### Claim 8

An electronic device comprising a metal fluoride film in at least part of an insulating film, wherein said metal fluoride film comprises a fluoride of nickel containing phosphorus.

### Claim 9 (depends on 8)

The electronic device of claim 8 wherein said metal fluoride film is a film which is formed by direct fluoridation of a nickel film containing phosphorus.

### Claim 10 (depends on 9)

The electronic device of claim 9 wherein said nickel film containing phosphorus is formed by means of a nonelectrolytic plating method.