# US 5,352,908 A · Diamond Schottky diode with oxygen

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- Number: US 5,352,908 A
- Document ID: US5352908A
- Status: Granted
- Kind: A
- Application number: 08/145,307
- Filed: 1993-11-03
- Granted: 1994-10-04
- Earliest claimed: 1991-03-29
- Assignees: Kabushiki Kaisha Kobe Seiko Sho
- Inventors: Koji Kobashi; Koichi Miyata; Kozo Nishimura
- Web page: https://patentgrep.com/patent/US5352908A

## CPC

- H10D 62/8303: {Diamond}
- H10D 8/60: Schottky-barrier diodes
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.

## Claims

### Claim 1

A diamond Schottky diode formed by a process comprising the steps of:
depositing a semiconducting diamond layer on a substrate;
depositing an insulating diamond layer on the semiconducting diamond layer using a mixture of gases which include at least carbon atoms, hydrogen atoms, and oxygen atoms as constituent atoms, and the oxygen atom concentration is sufficiently high to ensure that said insulating diamond layer is more highly crystalline and has lowered lattice defects than an insulating diamond layer which is grown without oxygen;
depositing an electrode on the insulating diamond layer.

### Claim 2 (depends on 1)

The diamond Schottky diode according to claim 1, wherein the semiconducting diamond layer has a p-type conductivity.

### Claim 3 (depends on 2)

The diamond Schottky diode according to claim 2, wherein the semiconducting diamond layer comprises a B-doped polycrystalline p-type semiconducting type.

### Claim 4 (depends on 1)

The diamond Schottky diode according to claim 1, wherein the semiconducting diamond layer has an n-type conductivity.

### Claim 5 (depends on 4)

The diamond Schottky diode according to claim 4, wherein the semiconducting diamond layer comprises an Si-doped polycrystalline n-type semiconductivity diamond layer.