# US 5,352,637 A · Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,352,637 A - Document ID: US5352637A - Status: Granted - Kind: A - Application number: 07/961,083 - Filed: 1992-10-14 - Granted: 1994-10-04 - Earliest claimed: 1991-11-28 - Assignees: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH - Inventors: Laszlo Fabry; Manfred Grundner; Dieter Graef; Susanne Bauer-Mayer; Peter John - Web page: https://patentgrep.com/patent/US5352637A ## CPC - H10P 14/6309: {of silicon in uncombined form, i.e. pure silicon} - H10P 14/6322: {Formation by thermal treatments (formation by plasma treatment H10P14/6319)} - H10P 14/6512: {by exposure to a gas or vapour} - Y10S 438/974: Substrate surface preparation - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures. ## Claims ### Claim 1 A process for producing storage-stable polished surfaces for a silicon wafer having advantageous oxidation properties comprising: hydrophilizing the polished wafer surfaces; subsequently exposing said polished wafer surfaces to an organosilicon reagent; and using as said organosilicon reagent a compound selected from the group consisting of haloalkylsilanes having the formula R.sub.x.sup.1 SiR.sub.y.sup.s (OR.sup.2).sub.4-x-y haloalkyldisilazanes having the formula (R.sub.x.sup.1 R.sub.3-x.sup.2 Si).sub.2 NH and the mixtures thereof, where R.sup.1 is a haloalkyl radical, R.sup.2 is an alkyl radical, x is an integer from 1 to 3, and y is the numeral 0 or 1. ### Claim 2 (depends on 1) The process as claimed in claim 1, wherein exposing the organosilicon reagent is carried out at a temperature below 150.degree. C. ### Claim 3 (depends on 1) The process as claimed in claim 1, wherein the haloalkyl moiety in the organosilicon reagent is fluoroalkyl or chloroalkyl. ### Claim 4 (depends on 1) The process as claimed in claim 1, wherein the chain length of the haloalkyl radical R.sup.1 is from 1 to 3 carbon atoms. ### Claim 5 (depends on 1) The process as claimed in claim 1, wherein R.sup.2 is an alkyl selected from the group consisting of methyl and ethyl. ### Claim 6 (depends on 1) The process as claimed in claim 1, wherein the organosilicon reagent has a vapor pressure of 0.5 hPa at a temperature of 25.degree. C. and a pressure of 1,000 hPa. ### Claim 7 (depends on 1) The process as claimed in claim 1, wherein a silicon wafer polished on one or two sides is treated. ### Claim 8 (depends on 1) The process as claimed in claim 1, wherein the hydrophilizing of the polished wafer surfaces is carried out in the form of an alkaline oxidative cleaning treatment. ### Claim 9 (depends on 1) The process as claimed in claim 1, wherein the hydrophilizing of the polished wafer surfaces is carried out in the form of an acidic oxidative cleaning treatment. ### Claim 10 (depends on 1) The process as claimed in claim 1, wherein the hydrophilizing of the polished wafer surfaces is carried out in the form of an ozonizing cleaning treatment. ### Claim 11 (depends on 1) The process as claimed in claim 1, wherein the organosilicon reagent is 1,3,3,3-tetrachloropropyltrimethoxysilane. ### Claim 12 (depends on 1) The process as claimed in claim 1, wherein the organosilicon reagent is 3,3,3-trifluoropropylmethyldimethoxysilane. ### Claim 13 (depends on 1) The process as claimed in claim 1, wherein the organosilicon reagent is bis(3,3,3-trifluoropropyl)tetramethyldisilazane. ### Claim 14 (depends on 1) The process as claimed in claim 1, wherein said mixture composition is from 25% to 75% by weight of the haloalkylsilane; and is from 25% to 75% by weight of the haloalkyldisilazane, with the weight being based upon the total weight of the mixture. ### Claim 15 (depends on 1) The process as claimed in claim 1, wherein said mixture composition is 50% by weight of the haloalkylsilane, and 50% by weight of the haloalkyldisilazane, with the weight being based upon the total weight of the mixture. ### Claim 16 (depends on 1) The process as claimed in claim 1, wherein the organosilicon reagent is selected from the group consisting of 1,3,3,3-tetrachloropropyltrimethoxysilane, 3,3,3-trifluoropropylmethyldimethoxysilane, and bis(3,3,3-trifluoropropyl)tetramethyldisilazane. ### Claim 17 (depends on 1) Silicon wafers produced by a process as claimed in claim 1. ### Claim 18 A process for producing storage-stable polished surfaces for a silicon wafer having advantageous oxidation properties comprising: hydrophilizing the polished wafer surfaces; subsequently exposing said polished wafer surfaces to an organosilicon reagent; and using as said organosilicon reagent a compound having the formula R.sub.x.sup.1 SiR.sub.y.sup.2 (OR.sup.2).sub.4-x-y where R.sup.1 is a haloalkyl radical, R.sup.2 is an alkyl radical, x is an integer from 1 to 3, and y is the numeral 0 or 1. ### Claim 19 (depends on 18) The process as claimed in claim 18, wherein the organosilicon reagent is selected from the group consisting of 1,3,3,3-tetrachloropropyltrimethoxysilane and 3,3,3-trifluoropropylmethyldimethoxysilane. ### Claim 20 (depends on 18) Silicon wafers produced by a process as claimed in claim 18.