# US 5,352,628 A · Method of forming diffusion region of semiconductor device by solid phase diffusion

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- Number: US 5,352,628 A
- Document ID: US5352628A
- Status: Granted
- Kind: A
- Application number: 08/019,873
- Filed: 1993-02-19
- Granted: 1994-10-04
- Earliest claimed: 1992-02-20
- Assignees: Mitsubishi Denki Kabushiki Kaisha
- Inventors: Shinji Funaba
- Web page: https://patentgrep.com/patent/US5352628A

## CPC

- H10P 32/14: within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP}
- H10P 32/174: {being Group III-V material}
- Y02E 10/544: Solar cells from Group III-V materials
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

An impurity is diffused into semiconductor epitaxial layers of a semiconductor device from a solid phase diffusion source through an additional thin film layer disposed on the epitaxial layers of the structure. After the diffusion, the thin film layer is removed. The material of the additional thin film layer has physical properties approximating those of the epitaxial layers. Accordingly, no crystallographic defects such as dislocations are introduced into the epitaxial layers by heat treatment, and, accordingly, the resulting device has reduced leakage current.

## Claims

### Claim 1

A method of forming a diffusion region of a semiconductor device by solid phase diffusion comprising the steps of:
epitaxially growing on a semiconductor substrate a plurality of semiconductor epitaxial layers sufficient for forming a semiconductor device;
epitaxially growing at least one additional semiconductor layer on an uppermost one of the plurality of semiconductor epitaxial layers sufficient for forming a semiconductor device, said additional semiconductor layer not being essential for the operation of the semiconductor device and having a thermal expansion coefficient different from the thermal expansion coefficient of the uppermost semiconductor epitaxial layer by no more of the uppermost semiconductor epitaxial layer by no more than 3.times.10.sup.-6 /.degree.C.;
placing a first solid phase diffusion source material on the additional semiconductor layer;
heat treating the structure including the plurality of semiconductor epitaxial layers, the additional semiconductor layer, and the first solid phase diffusion source material to diffuse the first solid phase diffusion source material through the additional semiconductor layer and into the plurality of semiconductor epitaxial layers to a desired depth; and
removing at least part of the additional semiconductor layer and the first solid phase diffusion material.

### Claim 2 (depends on 1)

The method according to claim 1 wherein the additional semiconductor layer comprises a material that can be selectively etched relative to the plurality of semiconductor epitaxial layers.

### Claim 3 (depends on 1)

The method according to claim 1 wherein the total thickness of the additional semiconductor layer is from 100 .ANG. to 5 .mu.m.

### Claim 4 (depends on 1)

The method according to claim 1 wherein the difference in lattice constants of the additional semiconductor layer and the uppermost semiconductor epitaxial layer is within a range of .+-.0.3%.

### Claim 5 (depends on 4)

The method according to claim 4 wherein part of the additional semiconductor layer is a semiconductor superlattice layer having a thickness of no more than 500 .ANG..

### Claim 6 (depends on 4)

The method according to claim 4 wherein part of the additional semiconductor layer is a semiconductor strained superlattice layer having a thickness of no more than 500 .ANG..

### Claim 7 (depends on 1)

The method according to claim 1 including, after the heat treatment, selectively removing portions of the additional semiconductor layer in contact with the first solid phase diffusion source material.

### Claim 8 (depends on 1)

The method according to claim 1 including varying the thickness of the additional semiconductor layer contacting the first solid phase diffusion source material to control the contour of a diffusion front formed in the heat treating step.

### Claim 9 (depends on 1)

The method according to claim 1 wherein the additional semiconductor layer comprises a thin layer containing a second solid phase diffusion source material, and including diffusion the first and second solid phase diffusion source materials simultaneously into the plurality of semiconductor epitaxial layers.

### Claim 10

A method of forming a diffusion region of a semiconductor device by solid phase diffusion comprising the steps of:
epitaxially growing on a semiconductor substrate a plurality of semiconductor epitaxial layers;
epitaxially growing at least one additional semiconductor layer on an uppermost one of the plurality of semiconductor epitaxial layers, said additional semiconductor layer having a thermal expansion coefficient different from the thermal expansion coefficient of the uppermost semiconductor epitaxial layer by no more than 3.times.01.sup.-6 /.degree.C.;
placing a first solid phase diffusion source material on the additional semiconductor layer;
heat treating the structure including the plurality of semiconductor epitaxial layers, the additional semiconductor layer, and the first solid phase diffusion source material to diffuse the first solid phase diffusion source material through the additional semiconductor layer and into the plurality of semiconductor epitaxial layers to a desired depth; and
removing the additional semiconductor layer and the first solid phase diffusion material.

### Claim 11 (depends on 10)

The method according to claim 10 wherein the additional semiconductor layer comprises a material that can be selectively etched relative to the plurality of semiconductor epitaxial layers.

### Claim 12 (depends on 10)

The method according to claim 10 wherein the total thickness of the additional semiconductor layer is from 100 .ANG. to 5 .mu.m.

### Claim 13 (depends on 10)

The method according to claim 10 wherein the difference in lattice constants of the additional semiconductor layer and the uppermost semiconductor epitaxial layer is within a range of .+-.0.3%.

### Claim 14 (depends on 13)

The method according to claim 13 wherein part of the additional semiconductor layer is a semiconductor superlattice layer having a thickness of no more than 500 .ANG..

### Claim 15 (depends on 13)

The method according to claim 13 wherein part of the additional semiconductor layer is a semiconductor strained superlattice layer having a thickness of no more than 500 .ANG..

### Claim 16 (depends on 10)

The method according to claim 10 including varying the thickness of the additional semiconductor layer contacting the first solid phase diffusion source material to control the contour of a diffusion front formed in the heat treating step.

### Claim 17 (depends on 10)

The method according to claim 10 wherein the additional semiconductor layer comprises a thin layer containing a second solid phase diffusion source material, and including diffusing the first and second solid phase diffusion source materials simultaneously into the plurality of semiconductor epitaxial layers.