# US 5,352,566 A · Method of manufacturing optoelectronic components

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- Number: US 5,352,566 A
- Document ID: US5352566A
- Status: Granted
- Kind: A
- Application number: 08/020,743
- Filed: 1993-02-22
- Granted: 1994-10-04
- Earliest claimed: 1992-02-29
- Assignees: Alcatel
- Inventors: Johann Springer; Peter Kersten; Klaus-D. Matthies
- Web page: https://patentgrep.com/patent/US5352566A

## CPC

- G02B 6/1221: {made from organic materials}
- G02B 6/13: Integrated optical circuits characterised by the manufacturing method
- G02F 1/065: in an optical waveguide structure
- G02F 2202/023: curable
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

Manufacturing of optoelectronic components in which an optical waveguide is made of an optically nonlinear (NLO) polymer, above and below of which is provided a buffer layer which carries at least one stripe electrode. The at least one stripe electrode is used as a mask to form the NLO polymer waveguide.

## Claims

### Claim 1

A method of manufacturing optoelectronic components in which an optical waveguide is made of an optically nonlinear polymer and which include stripe electrodes arranged above and below the optical waveguide, comprising the steps of:
a) forming on a glass substrate provided with a layer of electrically conductive material, at least one stripe electrode by a photolithographic technique;
b) providing the substrate with a buffer layer of a polymer, which is cured;
c) providing the surface of the buffer layer with a protection resistant to oxygen plasma;
d) depositing a second buffer layer of a polymer and then coating with a positive photoresist;
e) exposing the substrate from below using the at lest one stripe electrode as an optical mask;
f) developing the photoresist and removing the unexposed photoresist;
g) depositing a thin aluminum layer by evaporation;
h) removing the developed photoresist layer with the aluminum layer thereon;
i) etching a channel into the second buffer layer above the stripe electrode, using the aluminum layer as an etch mask;
j) removing the aluminum layer;
k) depositing a layer of an optically nonlinear polymer which fills the channel;
l) forming a third buffer layer; and
m) forming at least one further stripe electrode on the third buffer layer.

### Claim 2

A method of manufacturing optoelectronic components in which an optical waveguide is made of an optically nonlinear polymer and which include stripe electrodes arranged above and below the optical waveguide, comprising the steps of:
a) forming on a glass substrate provided with a layer of electrically conductive material, at least one stripe electrode by a photolithographic technique;
b) providing the substrate with a buffer layer of a photocuring polymer;
c) forming a second buffer layer of a photocuring polymer;
d) exposing the second buffer layer from an underside of the substrate using the at lest one stripe electrode as an optical mask;
e) developing and removing the unexposed portions of the second buffer layer;
f) depositing a layer of an optically nonlinear polymer which fills a channel created in the second buffer layer;
g) forming a third buffer layer; and
h) forming at least one further stripe electrode on the third buffer layer.

### Claim 3 (depends on 1)

A method as claimed in claim 1, wherein as protection for the first buffer layer, a layer resistant to oxygen plasma is produced.

### Claim 4 (depends on 1)

A method as claimed in claim 1, wherein as protection for the first buffer layer, the surface of the first buffer layer is changed by chemical treatment.

### Claim 5 (depends on 1)

A method as claimed in claim 1 wherein prior to the deposition of the positive photoresist, the second buffer layer is provided with a solvent-resisting protection layer.

### Claim 6 (depends on 1)

A method as claimed in claim 1 wherein the channel in the second buffer layer and in the protection layer is formed by reactive ion etching.

### Claim 7 (depends on 3)

A method as claimed in claim 3, wherein prior to the deposition of the positive photoresist, the second buffer layer is provided with a solvent-resisting protection layer.

### Claim 8 (depends on 4)

A method as claimed in claim 4, wherein the channel in the second buffer layer and in the protection layer is formed by reactive ion etching.