# US 5,352,564 A · Resist compositions

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- Number: US 5,352,564 A
- Document ID: US5352564A
- Status: Granted
- Kind: A
- Application number: 08/184,171
- Filed: 1994-01-19
- Granted: 1994-10-04
- Earliest claimed: 1993-01-19
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Inventors: Yoshihumi Takeda; Toshinobu Ishihara; Ken'ichi Itoh; Kazumasa Maruyama
- Web page: https://patentgrep.com/patent/US5352564A

## CPC

- G03F 7/0758: {with silicon- containing groups in the side chains}
- G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023)
- Y10S 430/11: Vinyl alcohol polymer or derivative
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A resist composition comprising a base resin, an acid release agent, and a dissolution inhibitor is improved in sensitivity and resolution when the base resin is typically selected from poly-t-butoxystyrene/poly-hydroxystyrene, poly-t-butoxystyrene/poly-p-methoxymethoxystyrene/polyhydroxystyrene, and poly-t-butoxystyrene/poly-p-methoxystyrene/polyhydroxystyrene copolymers. The composition forms a resist useful for the manufacture of LSI.

## Claims

### Claim 1

A resist composition comprising a base resin, an acid release agent capable of generating an acid upon exposure to light, and a dissolution inhibitor containing an acid unstable group, said base resin being represented by the following rational formula (1), (2) or (3): ##STR29## wherein each of R.sup.1 and R.sup.3 is a hydrogen atom or methyl group, R.sup.2 is a tert-butyl group, and letters a and b satisfy a+b=1, ##STR30## wherein each of R.sup.1, R.sup.3 and R.sup.5 is a hydrogen atom or methyl group, R.sup.4 is a tert-butyl group, R.sup.6 is an acid hydrolyzable group selected from the group consisting of methoxymethyl, tetrahydro-pyranyl, trialkylsilyl, isopropoxymethyl, tetrahydrofuranyl, and tert-butoxycarbonyl groups, and letters c, d and e satisfy c+d+e=1, ##STR31## wherein each of R.sup.1, R.sup.3 and R.sup.5 is a hydrogen atom or methyl group, R.sup.7 is selected from the group consisting of tert-butyl, methoxymethyl, tetrahydropyranyl, and trialkylsilyl groups, and R.sup.8 is a lower alkoxy group or a hydrogen atom, and letters f, g and h satisfy f+g+h=1.

### Claim 2 (depends on 1)

A resist composition according to claim 1 wherein said base resin has a molecular weight dispersity Mw/Mn of 1.0 to 1.4.

### Claim 3 (depends on 1)

A resist composition as in claim 1, wherein the base resin is of the rational formula (1) ##STR32##

### Claim 4 (depends on 3)

A resist composition according to claim 3, wherein said base resin has a molecular weight dispersity Mw/Mn of 1.0 to 1.4.

### Claim 5 (depends on 1)

A resist composition as in claim 1, wherein the base resin is of the rational formula (2) ##STR33##

### Claim 6 (depends on 5)

A resist composition according to claim 5, wherein said base resin has a molecular weight dispersity Mw/Mn of 1.0 to 1.4.

### Claim 7 (depends on 1)

A resist composition as in claim 1, wherein the base resin is of the rational formula (3) ##STR34##

### Claim 8 (depends on 7)

A resist composition according to claim 7, wherein said base resin has a molecular weight dispersity Mw/Mn of 1.0 to 1.4.

### Claim 9 (depends on 1)

A resist composition as in claim 1, wherein the base resin is of the rational formula ##STR35## wherein a+b=1 ##STR36## wherein c+d+e=1 or ##STR37## wherein f+g+h=1.

### Claim 10 (depends on 9)

A resist composition as in claim 9, wherein the acid release agent is ##STR38##

### Claim 11 (depends on 9)

A resist composition as in claim 9, wherein the dissolution inhibitor is 2,2,bis[p-(t-butoxycarboxyloxy)-phenylpropane.

### Claim 12 (depends on 1)

A resist composition as in claim 1, wherein the base resin is a poly-tert-butoxy-.alpha.-methylstyrene, polyhydroxystyrene or of the rational formulae ##STR39## wherein a+b=1; a+d+e=1, and f+g+h=1.