# US 5,352,492 A · Annealing process

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- Number: US 5,352,492 A
- Document ID: US5352492A
- Status: Granted
- Kind: A
- Application number: 08/033,130
- Filed: 1993-03-18
- Granted: 1994-10-04
- Earliest claimed: 1992-03-20
- Assignees: GEC-Marconi Limited
- Inventors: John Stoemenos
- Web page: https://patentgrep.com/patent/US5352492A

## CPC

- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3456: {Polycrystalline}
- H10P 72/0404: {for general liquid treatment, e.g. etching followed by cleaning}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a process and apparatus for annealing a substance, such as polysilicon, which is deposited on a substrate, such as a glass plate, the annealing temperature is required to be greater than the softening temperature of the substrate. To prevent deformation of the substrate it is supported on a liquid of density greater than that of the substrate. The liquid is preferably molten tin.

## Claims

### Claim 1

A process of annealing an annealable substance deposited on a substrate constituted of a heat-softenable material that has a density and softens at a softening temperature, comprising the steps of: supporting the substrate on a liquid having a boiling point and a density greater than the density of the substrate material; and raising the temperature of the substrate and the substance deposited thereon to an annealing temperature which is higher than the softening temperature of the substrate material but lower than the boiling point of the liquid.

### Claim 2 (depends on 1)

A process as claimed in claim 1, wherein the liquid is one of a molten metal and an alloy having a melting temperature which is lower than the softening temperature of the substrate material.

### Claim 3 (depends on 2)

A process as claimed in claim 2, wherein the metal is selected from the group consisting of tin, zinc and lead.

### Claim 4 (depends on 1)

A process as claimed in claim 1, wherein the substance deposited on the substrate is polysilicon.

### Claim 5 (depends on 4)

A process as claimed in claim 4, and the step of covering the polysilicon with a protective layer that resists contact between the polysilicon and the liquid, before performing the step of raising the temperature of the polysilicon to the annealing temperature.

### Claim 6 (depends on 5)

A process as claimed in claim 5, wherein the protective layer is silicon dioxide.

### Claim 7 (depends on 1)

A process as claimed in claim 1, and the step of moving the substrate along an upper surface of the liquid to successively hotter regions until the annealing temperature is reached, and then to successively cooler regions until the substrate material is below its softening temperature.

### Claim 8 (depends on 1)

A process as claimed in claim 1, wherein the substrate material is glass.