# US 5,352,488 A · Chemical vapor deposition process employing metal pentadienyl complexes

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- Number: US 5,352,488 A
- Document ID: US5352488A
- Status: Granted
- Kind: A
- Application number: 08/061,447
- Filed: 1993-05-14
- Granted: 1994-10-04
- Earliest claimed: 1993-05-14
- Assignees: Syracuse University
- Inventors: James T. Spencer; Richard D. Ernst
- Web page: https://patentgrep.com/patent/US5352488A

## CPC

- C23C 16/18: from metallo-organic compounds
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Vapor deposition of metal films is carried out using as precursors metal compounds or complexes based on open pentadienyls and derivatives. The technique can be used favorably for transition metal depositions, and can be carried out photolytically or thermolytically. In certain cases, oxygen can be substituted for a terminal carbon atom.

## Claims

### Claim 1

Chemical vapor deposition process for depositing a metal film upon a substrate comprising contacting said substrate with a vapor of a precursor of the general formula ##STR4## where M is a nonferrous metallic element; Ln is one or more additional ligands;
R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are substituents selected from the group consisting of hydrogen, lower alkyl, halogenated lower alkyl, alkylated silyl and siloxy; and
thermally or photolytically decomposing said precursor in contact with the substrate with sufficient energy to bring about deposition of a film of the metallic element.

### Claim 2 (depends on 1)

The chemical vapor deposition process of claim 1, where said R.sub.1 and R.sub.5 are trimethylsily.

### Claim 3 (depends on 1)

The chemical vapor deposition process of claim 1, wherein said precursor is M(2,4-C.sub.7 H.sub.11).sub.2, where M is selected from the group consisting of Ti, V, Cr, Ru, and Os.

### Claim 4 (depends on 1)

The chemical vapor deposition process of claim 1 wherein said precursor is M(1,5-(Me.sub.3 Si).sub.2 C.sub.5 H.sub.5).sub.2, where M is selected from the group consisting of Ti and Zr.

### Claim 5 (depends on 1)

The chemical vapor deposition process of claim 1 where said precursor is M(2,4-C.sub.7 H.sub.11).sub.2 (L), where M is selected from the group consisting of Hf, Nb, Mo, W, Zr, V, and Ti, and L is a neutral donor ligand selected from the group consisting of phosphine and carbonyl.

### Claim 6 (depends on 1)

The chemical vapor deposition process claim 1, wherein said decomposing is carried out photolytically by directing a laser beam onto selected locations on said substrate.

### Claim 7 (depends on 1)

The chemical vapor deposition process of claim 1 wherein said contacting includes subliming said precursor to form said vapor thereof, and flowing said vapor past said substrate.

### Claim 8

Chemical vapor deposition process for depositing a metal film upon a substrate, comprising
contacting said substrate with a vapor of a precursor of the general formula ##STR5## where M is a metallic element; Ln is one or more additional ligands; and
R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are selected from the group that consists of hydrogen, lower alkyls, halogenated lower alkyls, silyls and alkylated silyl; and
thermally or photolytically decomposing said precursor at predetermined locations where said precursor contacts the substrate to bring about deposition of the metallic element.

### Claim 9 (depends on 8)

Chemical vapor deposition process according to claim 8 wherein said metal M is a transition metal.

### Claim 10 (depends on 9)

Chemical vapor deposition process according to claim 9 wherein said metal M is a Group IV B to VIII B transition metal.

### Claim 11 (depends on 10)

Chemical vapor deposition according to claim 10 wherein said metal is a Group VIII B transition metal.

### Claim 12 (depends on 8)

Chemical vapor deposition process according to claim 8, wherein said precursor is a methylated ruthenium bis-(oxopentadienyl).

### Claim 13 (depends on 1)

Chemical vapor deposition process according to claim 1, wherein said metallic element is selected from the metals in the lanthanum and actinium series.