# US 5,351,214 A · Memory with on-chip detection of bit line leaks

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- Number: US 5,351,214 A
- Document ID: US5351214A
- Status: Granted
- Kind: A
- Application number: 08/055,536
- Filed: 1993-04-28
- Granted: 1994-09-27
- Earliest claimed: 1992-04-30
- Assignees: SGS-Thomson Microelectronics S.A.
- Inventors: Olivier Rouy
- Web page: https://patentgrep.com/patent/US5351214A

## CPC

- G11C 29/025: {in signal lines}
- G11C 29/02: Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C 29/50: Marginal testing, e.g. race, voltage or current testing
- G11C 16/04: using variable threshold transistors, e.g. FAMOS
- G11C 2029/5006: {Current}
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A circuit for the detection of current leaks on a bit line of a memory (such as an EPROM or flash EPROM), which includes a current generator and circuitry for applying zero volts to the gates of all the cells f the bit line. The detection information is delivered by a comparison circuit. It corresponds to the result of the comparison between the test current and the current flowing in the bit line. Advantageously, the detection circuit is incorporated into the read circuit of the memory. Also disclosed is an associated detection method, and a memory circuit which includes such a detection circuit.

## Claims

### Claim 1

An integrated circuit, comprising:
an array of memory cells organized in rows and columns, wherein each said cell includes a floating gate transistor;
address decode logic, connected to access a selected one of said rows of cells, and to connect a selected column for sensing, in accordance with an externally received address;
a sense amplifier, connected to differentially compare the current drawn on said selected column, by a cell in said selected row, with the current supplied by a read reference current source;
a leakage-detect current source, connected to supply a leakage reference current which is less than the current supplied by said read reference current source; and
test logic, configured and connected to differentially compare said leakage reference current with, for each successive column, the current drawn on said each successive column while no rows are selected.

### Claim 2 (depends on 1)

The integrated circuit of claim 1, wherein said memory cells are electrically programmable but not electrically erasable.

### Claim 3 (depends on 1)

The integrated circuit of claim 1, wherein, during test mode, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said leakage-detect current source while no rows are selected.

### Claim 4 (depends on 1)

The integrated circuit of claim 1, wherein said test logic uses at least portions of said sense amplifier to perform said differential comparison between said leakage reference current and the current drawn on said each successive column

### Claim 5 (depends on 1)

The integrated circuit of claim 1, wherein said memory cells are individually electrically programmable and electrically erasable.

### Claim 6 (depends on 1)

The integrated circuit of claim 1, wherein said read reference current source comprises only a single floating-gate cell.

### Claim 7

An integrated circuit, comprising:
an array of memory cells organized in rows and columns, wherein each said cell includes a floating gate transistor;
address decode logic, connected to access a selected one of said rows of cells, and to connect a selected column for sensing, in accordance with an externally received address;
a leakage-detect current source, connected to supply a leakage reference current which is less than the current supplied by a read reference current source; and
a sense amplifier configured to perform differential current comparison;
wherein, during a normal read operation, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said read reference current source;
and wherein, during test mode, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said leakage-detect current source.

### Claim 8 (depends on 7)

The integrated circuit of claim 7, wherein said memory cells are electrically programmable but not electrically erasable.

### Claim 9 (depends on 7)

The integrated circuit of claim 7, wherein, during said test mode, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said leakage-detect current source while no rows are selected.

### Claim 10 (depends on 7)

The integrated circuit of claim 7, wherein said memory cells are individually electrically programmable and electrically erasable.

### Claim 11 (depends on 7)

The integrated circuit of claim 7, wherein said read reference current source comprises only a single floating-gate cell.

### Claim 12

An integrated circuit, comprising:
an array of memory cells organized in rows and columns, wherein each said cell includes a floating gate transistor;
address decode logic, connected to access a selected one of said rows of cells, and to connect a selected column for sensing, in accordance with an externally received address;
a read reference current source, comprising at least one unprogrammed floating gate transistor;
a leakage-detect current source, connected to be activated, in test mode, to supply a leakage reference current which is less than the current supplied by said read reference current source; and
a sense amplifier configured to perform differential current comparison;
wherein, during a normal read operation, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said read reference current source;
and wherein, during said test mode, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said leakage-detect current source.

### Claim 13 (depends on 12)

The integrated circuit of claim 12, wherein said memory cells are electrically programmable but not electrically erasable.

### Claim 14 (depends on 12)

The integrated circuit of claim 12, wherein, during said test mode, said sense amplifier is connected to differentially compare the current drawn on a selected column with the current supplied by said leakage-detect current source while no rows are selected.

### Claim 15 (depends on 12)

The integrated circuit of claim 12, wherein said memory cells are individually electrically programmable and electrically erasable.

### Claim 16 (depends on 12)

The integrated circuit of claim 12, wherein said read reference current source comprises only a single floating-gate cell.