# US 5,351,081 A · Solid-state imaging device having a light barrier layer

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- Number: US 5,351,081 A
- Document ID: US5351081A
- Status: Granted
- Kind: A
- Application number: 08/173,955
- Filed: 1993-12-23
- Granted: 1994-09-27
- Earliest claimed: 1990-11-16
- Assignees: Sony Corporation
- Inventors: Hiromichi Matsui; Kazuomi Ezoe; Toshiro Kurusu
- Web page: https://patentgrep.com/patent/US5351081A

## CPC

- H10F 77/334: {for shielding light, e.g. light blocking layers or cold shields for infrared detectors}
- H10F 39/153: {Two-dimensional or three-dimensional array CCD image sensors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid-state imaging device in which a light-barrier layer is formed on transfer electrodes on top of a vertical pixel isolating region by an insulating film. The light-barrier layer is adapted to overlie the lateral sides of the transfer electrodes and the peripheral region of a photosensor region neighboring on the vertical pixel isolating region. By provision of the light-barrier layer, the light incident on the vertical pixel isolating region is stopped to reduce smear charges which might otherwise be intruded into the vertical charge transfer section.

## Claims

### Claim 1

A CCD comprising:
a plurality of pixels arrayed in a plurality of vertical columns,
a plurality of vertical transfer sections arrayed parallel to said columns of pixels and completely covered with a light-barrier layer,
a plurality of vertical pixel isolating regions adapted for vertically isolating said pixels from one another, by means of a potential barrier formed in a semiconductor substrate and a light-barrier layer, and said vertical pixel isolating regions each having a down slope of potential in the direction of said transfer section and arrayed between rows of said pixels, wherein said light-barrier layer completely covers the whole of said vertical pixel isolating region.

### Claim 2 (depends on 1)

The CCD according to claim 1 wherein a vertical transfer electrode of said vertical transfer section is comprised of two polysilicon electrodes.

### Claim 3 (depends on 1)

The CCD according to claim 1 wherein said light-barrier layer is comprised of an aluminum layer.

### Claim 4 (depends on 1)

The CCD according to claim 1 wherein impurity concentration of said vertical pixel isolating region is adjusted to prevent a channel from being formed in said vertical pixel isolating region when a driving current is supplied to a transfer electrode on top of the vertical pixel isolating region.