# US 5,350,919 A · Quantitative analyzing method by a secondary ion mass spectrometric method and a secondary ion mass spectrometer

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- Number: US 5,350,919 A
- Document ID: US5350919A
- Status: Granted
- Kind: A
- Application number: 08/084,476
- Filed: 1993-07-01
- Granted: 1994-09-27
- Earliest claimed: 1991-09-17
- Assignees: Sony Corporation
- Inventors: Takashi Hirano; Takeshige Tanigaki; Hideki Kimura
- Web page: https://patentgrep.com/patent/US5350919A

## CPC

- H01J 49/142: {using a solid target which is not previously vapourised}
- G01N 23/2258: Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS] (mass-to-charge ratio analysis aspects of SIMS for material analysis G01N27/62)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A quantitative analyzing method by a secondary ion mass spectrometric method comprises the steps of: quantitatively analyzing the target element by the secondary ion mass spectrometric method with respect to a plurality of ion-implanted standard samples, while changing an implantation energy; and correcting a secondary ion intensity which is obtained with respect to the target element in the surface layer of the sample to be analyzed by the secondary ion mass spectrometric method on the basis of the results of the quantitative analyses with respect to the plurality of standard samples. A secondary ion mass spectrometer having such a function is also disclosed.

## Claims

### Claim 1

A quantitative analyzing method by a secondary ion mass spectrometric method whereby a target element in a sample to be analyzed is quantitatively analyzed by the secondary ion mass spectrometric method, comprising the steps of:
quantitatively analyzing said target element by the secondary ion mass spectrometric method with respect to a plurality of ion-implanted standard samples, while changing an implantation energy; and
correcting a secondary ion intensity which is obtained with respect to said target element in the surface layer of said sample to be analyzed by the secondary ion mass spectrometric method on the basis of the results of the quantitative analyses with respect to said plurality of standard samples.

### Claim 2 (depends on 1)

The quantitative analyzing method according to claim 1,
wherein said sample to be analyzed is a silicon substrate containing in its surface layer at least one element selected from a group of B, As, P and Sb and
wherein .sup.32 O.sub.2.sup.+ is used as a primary ion species.

### Claim 3

A secondary ion mass spectrometer having a function such that a secondary ion intensity which is obtained with respect to a target element in the surface layer of a sample to be analyzed by a secondary ion mass spectrometric method is corrected on the basis of results such that said target element was quantitatively analyzed by the secondary ion mass spectrometric method with respect to a plurality of ion-implanted standard samples, while changing an implantation energy.