# US 5,350,915 A · Image sensor using organic photoconductor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,350,915 A - Document ID: US5350915A - Status: Granted - Kind: A - Application number: 08/077,443 - Filed: 1993-06-17 - Granted: 1994-09-27 - Earliest claimed: 1992-06-18 - Assignees: Mitsubishi Kasei Corporation; Mitsubishi Electric Corporation - Inventors: Kei Ishihara; Kiyoshi Matsuda; Atsushi Tamaki; Masatoshi Katoh; Tadahiko Hamaguchi; Takashi Takeda - Web page: https://patentgrep.com/patent/US5350915A ## CPC - H10F 39/191: {Photoconductor image sensors} - H10K 39/32: Organic image sensors - H10F 39/198: {Contact-type image sensors [CIS]} - H10K 30/451: {comprising a metal-semiconductor-metal [m-s-m] structure} - H10K 85/631: {Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine} - H10K 85/657: {Polycyclic condensed heteroaromatic hydrocarbons} - H10K 85/6572: {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract An image sensor uses an image reading element formed by integrating pixels for converting image information to an electric signal. In each of the pixels, a common electrode common to all the pixels and an individual electrode corresponding to each of the pixels are disposed through at least an organic photoconductive layer. A crosstalk capacitance of each of the pixels is equal to or smaller than 35% of a sum of an electric capacitance between individual electrodes and an output capacitance of the individual electrode. A blocking layer may be disposed between the common and individual electrodes. Each of the pixels may be constructed such that the individual electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the individual electrode, and the common electrode is arranged on the blocking and photoconductive layers. Otherwise, each of the pixels may be constructed such that the common electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the common electrode, and the individual electrode is arranged on the blocking and photoconductive layers. ## Claims ### Claim 1 An image sensor using an image reading element formed by integrating pixels for converting image information to an electric signal in which a common electrode common to all the pixels and an individual electrode corresponding to each of the pixels are disposed through at least an organic photoconductive layer; a crosstalk capacitance between the individual electrodes being equal to or smaller than 35% of a sum of an electric capacitance of each of the pixels and an output capacitance of the individual electrode. ### Claim 2 (depends on 1) An image sensor as claimed in claim 1, wherein a blocking layer is further disposed between the common and individual electrodes. ### Claim 3 (depends on 1) An image sensor as claimed in claim 1, wherein each of the pixels is constructed such that the individual electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the individual electrode, and the common electrode is arranged on the blocking and photoconductive layers. ### Claim 4 (depends on 1) An image sensor as claimed in claim 1, wherein each of the pixels is constructed such that the common electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the common electrode, and the individual electrode is arranged on the blocking and photoconductive layers. ### Claim 5 (depends on 1) An image sensor as claimed in claim 1, wherein at least one of the common and individual electrodes is constructed by a transparent electrode. ### Claim 6 (depends on 3, 4) An image sensor as claimed in claim 3 or 4, wherein the supporting body is constructed by a transparent supporting body. ### Claim 7 (depends on 1) An image sensor as claimed in claim 1, wherein the individual electrode is formed such that the width of an individual electrode portion unopposed to said common electrode is narrower than the width of an individual electrode portion opposed to the common electrode. ### Claim 8 (depends on 1) An image sensor as claimed in claim 1, wherein an insulation layer is disposed in at least a portion between the common and individual electrodes. ### Claim 9 (depends on 1) An image sensor as claimed in claim 1, wherein a constructional portion of the organic photoconductive layer and a blocking layer and a constructional portion of an insulation layer and the blocking layer are arranged between the common and individual electrodes. ### Claim 10 (depends on 9) An image sensor as claimed in claim 9, wherein a line width of the individual electrode is set to be narrow in a boundary portion of the organic photoconductive layer and the insulation layer. ### Claim 11 (depends on 1) An image sensor as claimed in claim 1, wherein a third electrode holding a constant potential is arranged such that the third electrode is opposed to a portion of the individual electrode through at least a blocking layer. ### Claim 12 (depends on 10) An image sensor as claimed in claim 10, wherein an insulation layer is arranged in at least a portion between the third electrode and the individual electrode. ### Claim 13 (depends on 8, 9, 10, 12) An image sensor as claimed in claim 8, 9, 10 or 12, wherein the insulation layer is formed by an insulator having a volumetric specific resistance value equal to or greater than 10.sup.7 .OMEGA. cm. ### Claim 14 (depends on 1) An image sensor as claimed in claim 1, wherein the crosstalk capacitance is equal to or smaller than 30% of the sum of the electric capacitance of each of the pixels and the output capacitance of the individual electrode.