# US 5,350,869 A · Purification of trialkylgallium, synthesis of trialkylgallium

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- Number: US 5,350,869 A
- Document ID: US5350869A
- Status: Granted
- Kind: A
- Application number: 08/098,483
- Filed: 1993-07-27
- Granted: 1994-09-27
- Earliest claimed: 1993-07-27
- Assignees: CVD Incorporated
- Inventors: Ravindra K. Kanjolia; Benjamin C. Hui; William B. Grant
- Web page: https://patentgrep.com/patent/US5350869A

## CPC

- C07F 5/00: Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

Trialkylgallium is purified of group II B p-type impurities, particularly Zn, Hg, and Cd, by contacting the trialkylgallium with a metallic gallium-containing melt. Also, trialkylgallium can be produced by contacting a dialkyl group II B compound with a metallic gallium-containing melt.

## Claims

### Claim 1

A method of removing group II B impurities in the form of dialkyl group II B compounds from a trialkyl group III A compound having unacceptably high levels of said impurities, including zinc impurities, the method comprising contacting said trialkyl group III A compound with a metallic gallium-containing melt which comprises at least about 10 wt. % indium for a time sufficient to reduce the level of zinc to about 0.5 ppm or below.

### Claim 2 (depends on 1)

A method according to claim 1, wherein said trialkyl group III A compound is contacted with said melt for sufficient time to reduce the level of zinc to about 0.05 ppm or below.

### Claim 3 (depends on 1)

A method according to claim 1 wherein said trialkyl group III A compound is a trialkylgallium.

### Claim 4 (depends on 1)

A method according to claim 1 wherein said melt further contains an oxygen-gettering metal.

### Claim 5 (depends on 4)

A method according to claim 4, wherein said gettering metal is aluminum.

### Claim 6

A method of removing group II B impurities in the form of dialkyl group II B compounds from a trialkyl group III A compound having unacceptably high levels of said impurities, including zinc impurities, the method comprising contacting said trialkyl group III A compound with a metallic gallium-containing melt which further contains an oxygen-gettering metal for a time sufficient to reduce the level of zinc to about 0.5 ppm or below.

### Claim 7 (depends on 6)

A method according to claim 6 wherein said trialkyl group III A compound is contacted with said melt for sufficient time to reduce the level of zinc to about 0.05 ppm or below.

### Claim 8 (depends on 6)

A method according to claim 6 wherein said gettering metal is aluminum.

### Claim 9 (depends on 6)

A method according to claim 6 wherein said trialkyl group III A compound is a trialkylgallium.

### Claim 10

A method of producing a trialkylgallium comprising contacting a dialkyl group II B compound with a melt containing at least a stoichiometric amount of gallium for a time sufficient to react substantially all of said dialkyl group II B compound with gallium to produce trialkylgallium and metallic group II B element.

### Claim 11 (depends on 10)

A method according to claim 10 wherein said dialkyl group II B compound is dialkylzinc.

### Claim 12 (depends on 11)

A method according to claim 11 wherein said dialkylzinc is dimethylzinc or diethylzinc.