# US 5,350,737 A · MBE process for preparing oxide superconducting films

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,350,737 A
- Document ID: US5350737A
- Status: Granted
- Kind: A
- Application number: 07/946,735
- Filed: 1992-08-28
- Granted: 1994-09-27
- Earliest claimed: 1989-10-31
- Assignees: Sumitomo Electric Industries, Ltd.
- Inventors: Keizo Harada; Hideo Itozaki; Shuji Yazu
- Web page: https://patentgrep.com/patent/US5350737A

## CPC

- H10N 60/0381: {by evaporation, e.g. MBE}
- Y10S 505/729: Growing single crystal, e.g. epitaxy, bulk
- Y10S 505/73: Vacuum treating or coating
- Y10S 505/786: Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component
- Y10S 505/819: Vapor deposition
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is excited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporarily after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before the next film-forming operation is restarted.

## Claims

### Claim 1

A process for preparing a film of oxide superconductor having a layered crystal structure by depositing constituent layers of said layered crystal structure on a substrate successively by molecular beam epitaxy (MBE) method while an oxygen-containing gas which is excited by irradiation of microwave is introduced in the neighborhood of a surface of the substrate, comprising the steps of depositing preselected numbers of constituent layers which correspond to one unit crystal or less than one unit crystal, interrupting the film-forming operation by the MBE method temporarily, maintaining the deposited constituent layers in an activated oxygen atmosphere in order to effect a crystallization promotive operation and then restarting a next film-forming operation by the MBE method after completion of said crystallization promotive operation which is terminated when a desired pattern is observed in a reflection high energy electron diffraction (RHEED) analyzer, a combination of said film-forming operation and said crystallization promotive operation being repeated for desired times until a desired film thickness is obtained.

### Claim 2 (depends on 1)

The method of claim 1 wherein said film-forming operation by the MBE method is interrupted temporarily after numbers of constituent layers which correspond to one unit crystal are layered.

### Claim 3 (depends on 1)

The method of claim 1 wherein said film-forming operation by the MBE method is interrupted temporarily after numbers of constituent layers which correspond to a half of unit crystal are layered.

### Claim 4 (depends on 1)

The process set forth in claim 1 wherein said desired pattern in the RHEED analyzer is a modulated pattern which is inherent to an oxide superconductor to be obtained.

### Claim 5 (depends on 1)

The process set forth in claim 1 wherein said desired pattern in the RHEED analyzer is a preselected streak pattern which is inherent to an oxide superconductor to be obtained.

### Claim 6 (depends on 1)

The process set forth in claim 1 wherein said oxide superconductor is an oxide selected from the group consisting of
(1) (La .sub.1-x .alpha. .sub.x) .sub.2 CuO .sub.4-y
in which .alpha. stands for Sr or Ba, "x" and "y" are numbers each satisfying respective range of 0.ltoreq.x<1 and 0.ltoreq.y<1,
(2) Ln, Ba.sub.2 Cu.sub.3 O .sub.7-z
in which "Ln" stands for at least one element selected from the group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Tm, Yb and Lu and "z" is a number satisfying a range of 0.ltoreq.z<1, and
(3) Bi .sub.4 (Sr .sub.1-k Ca .sub.k) .sub.m Cu .sub.n O .sub.p+.delta.
in which "k", "m", "n", "p" and ".delta." are numbers each satisfying respective range of 0<k<1, 6.ltoreq.m.ltoreq.10, 4.ltoreq.n.ltoreq.8, p=6+m+n and -2.ltoreq..delta..ltoreq.+2.
(4) Bi .sub.2-q Pb .sub.q Sr .sub.2 Ca .sub.r-1 Cu .sub.r O .sub..gamma.
in which "q", "r" and ".delta." are numbers each satisfying respective range of 0.1.ltoreq.q.ltoreq.1, 1.ltoreq.r.ltoreq.6 and 6.ltoreq..gamma..ltoreq.16.

### Claim 7 (depends on 1)

The process set forth in claim 1 wherein said substrate is selected from the group consisting of MgO, SrTiO.sub.3, YSZ, LaGaO.sub.3, LaGaO.sub.3 and LaAlO.sub.3.

### Claim 8 (depends on 1)

The process set forth in claim 1 wherein said substrate is heated at 550.degree. to 750.degree. C. during said film-forming operation and said crystallization promotive operation.

### Claim 9 (depends on 1)

The process set forth in claim 1, when an oxide superconductor of Y .sub.1 Ba .sub.2 Cu .sub.3 O .sub.7-z, in which "z" is a number satisfying a range of 0.ltoreq.z<1, is prepared, said film-forming operation by the MBE method is interrupted temporarily after numbers of constituent layers which correspond to one unit crystal are layered.

### Claim 10 (depends on 1)

The process set forth in claim 1, when an oxide superconductor of Bi .sub.4 Sr .sub.4 Ca .sub.4 Cu .sub.6 O .sub.16+.delta., in which ".delta." is a number satisfying a range of -2.ltoreq..delta..ltoreq.+2, is prepared, said film-forming operation by the MBE method is interrupted temporarily after numbers of constituent layers which correspond to a half unit crystal are layered.