# US 5,350,639 A · Dielectric ceramic for use in microwave device, a microwave dielectric ceramic resonator dielectric ceramics > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,350,639 A - Document ID: US5350639A - Status: Granted - Kind: A - Application number: 07/941,961 - Filed: 1992-09-08 - Granted: 1994-09-27 - Earliest claimed: 1991-09-10 - Assignees: Matsushita Electric Industrial Co., Ltd. - Inventors: Tatsuya Inoue; Hiroshi Kagata; Junichi Kato; Ichiro Kameyama - Web page: https://patentgrep.com/patent/US5350639A ## CPC - H01P 7/10: Dielectric resonators - Y10T 428/12611: Oxide-containing component - Y10T 428/12618: Plural oxides - Y10T 428/12882: Cu-base component alternative to Ag-, Au-, or Ni-base component - H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract Dielectric ceramics a microwave device made of (Bi.sub.2 O.sub.3).sub..times. (Nb.sub.2 O.sub.5).sub.1-x includes at least one of subcomponents of CuO and V.sub.2 O.sub.5, wherein the composition ratio x is fallen into a range of 0.48.ltoreq..times..ltoreq.0.51, an atomic ratio AR1 defined by the following equation: AR1=(the number of Cu atoms of the CuO)/ARO, where ARO=(the number of Bi atoms of the (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of the (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is fallen into a range of 0<AR1< 0.01, and another atomic ratio AR2 defined by the following equation: AR2=(the number of V atoms of the V.sub.2 O.sub.5)/ARO is fallen into a range of 0<AR2.ltoreq. 0.02. Further, a microwave dielectric resonator includes a microstrip conductor formed between a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers, wherein the microstrip conductor is electrically connected to one external electrode and the dielectric layers are made of the above-mentioned dielectric ceramics. Furthermore, a process of making a microwave dielectric ceramics resonator includes a step of firing a resonator element in nitrogen atmosphere under a condition of an oxygen concentration equal to or less than 1000 ppm at a temperature in a range from 875.degree. to 1000 .degree. C. ## Claims ### Claim 1 Dielectric ceramic for use in a microwave device made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponent of CuO, wherein the composition ration x is within a range of 0.48.ltoreq..times..ltoreq.0.51, and an atomic ratio AR1 defined by the following equations: AR1=(the number of Cu atoms of said CuO)/ARO, and AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is within a range of 0<Ar1.ltoreq.0.01, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C. ### Claim 2 Dielectric ceramic for use in a microwave device made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponent of V.sub.2 O.sub.5, wherein the composition ration x is within a range of 0.48 .ltoreq..times..ltoreq.0.51, and an atomic ratio AR2 defined by the following equations: AR2=(the number of V atoms of said V.sub.2 O.sub.5)/ARO, and AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range between 875.degree. C. to 1000.degree. C. ### Claim 3 Dielectric ceramic for use in a microwave device made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including subcomponents of CuO and V.sub.2 O.sub.5, wherein the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51, an atomic ratio AR1 defined by the following equations: AR1=(the number of Cu atoms of said CuO)/ARO, and AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is within a range of 0<AR1.ltoreq.0.01, and another atomic range AR2 defined by the following equation: AR2=(the number of V atoms of said V.sub.2 O.sub.5)/(ARO is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range form 875.degree. C. to 1000.degree. C. ### Claim 4 A microwave dielectric resonator comprising: first and second external electrodes; first and second conductors electrically connected to said first and second external electrodes, respectively; a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers both formed between said first and second conductors, said first and second dielectric layers being made of dielectric ceramics; and a microstrip conductor formed between said plurality of first sheet-shaped dielectric layers and said plurality of second sheet-shaped dielectric layers, said microstrip conductor being electrically connected to said second external electrode, wherein each of said first and second conductors and said microstrip conductor is made of a compound selected from a group consisting of Cu, Ag, Au, an alloy of Ag and Pt, an alloy of Ag and Pd, and an alloy of Cu and Pd, and said dielectric ceramic of said first and second sheet-shaped dielectric layers are made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponent of CuO, where the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51, and an atomic ratio AR1 defined by the following equations: AR1=(the number of Cu atoms of said CuO)/ARO, and AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is within a range of 0<AR1.ltoreq.0.01, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C. ### Claim 5 A microwave dielectric resonator comprising: first and second external electrodes; first and second conductors electrically connected to said first and second external electrodes, respectively; a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers both formed between said first and second conductors, said first and second dielectric layers being made of dielectric ceramics; and a microstrip conductor formed between said plurality of first sheet-shaped dielectric layers and said plurality of second sheet-shaped dielectric layers, said microstrip conductor being electrically connected to said second external electrode, wherein each of said first and second conductors and said microstrip conductor is made of a compound selected from a group consisting of Cu, Ag, Au, an alloy of Ag and Pt, an alloy of Ag and Pd, and an alloy of Cu and Pd, and said dielectric ceramics of said first and second sheet-shaped dielectric layers are made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponents of V.sub.2 O.sub.5, where the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51and an atomic ratio AR2 defined by the following equations: AR2=(the number of V atoms of said V.sub.2 O.sub.5)/ARO, and AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C. ### Claim 6 A microwave dielectric resonator comprising: first and second external electrodes; first and second conductors electrically connected to said first and second external electrodes, respectively; a plurality of first sheet-shaped dielectric layers and a plurality of second sheet-shaped dielectric layers both formed between said first and second conductors, said first and second dielectric layers being made of dielectric ceramics; and a microstrip conductor formed between said plurality of first sheet-shaped dielectric layers and said plurality of second sheet-shaped dielectric layers, said microstrip conductor being electrically connected to said second external electrode, wherein each of said first and second conductors and said microstrip conductor is made of a compound selected from a group consisting of Cu, Ag, Au, an alloy of Ag and Pt, an alloy of Ag and Pd, and an alloy of Cu and Pd, and said dielectric ceramics of said first and second sheet-shaped dielectric layers are made of (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x including a subcomponents of CuO and V.sub.2 O.sub.5, where the composition ratio x is within a range of 0.48.ltoreq..times..ltoreq.0.51, an atomic ratio AR1 defined by the following equations: AR1=(the number of Cu atoms of said CuO)/ARO, , and AR0=(the number of Bi atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x)+(the number of Nb atoms of said (Bi.sub.2 O.sub.3).sub.x (Nb.sub.2 O.sub.5).sub.1-x) is within a range of 0<AR1.ltoreq.0.01, and another atomic ratio AR2 defined by the following equation: AR2=(the number of V atoms of said V.sub.2 O.sub.5)/ARO is within a range of 0<AR2.ltoreq.0.02, said dielectric ceramic being fired at a temperature in a range from 875.degree. C. to 1000.degree. C. ### Claim 7 (depends on 1) The dielectric ceramic according to claim 1, wherein said dielectric ceramic has a relative dielectric constant equal to or greater than 40 in a microwave band including the frequency range from 2 to 6 GHz, a Q value greater than 500 in said microwave band, and an absolute value of a change ratio of a resonance frequency less than 100 ppm/.degree. C. in said microwave band in a temperature range from -25.degree. to 85.degree. C. ### Claim 8 (depends on 2) The dielectric ceramic according to claim 2, wherein said dielectric ceramic has a relative dielectric constant equal to or greater than 40 in a microwave band including the frequency range from 2 to 6 GHz, a Q value greater than 500 in said microwave band, and an absolute value of a change ratio of a resonance frequency less than 100 ppm/.degree. C. in said microwave band in a temperature range from -25.degree. to 85.degree. C. ### Claim 9 (depends on 3) The dielectric ceramic according to claim 3, wherein said dielectric ceramic has a relative dielectric constant equal to or greater than 40 in a microwave band including the frequency range from 2 to 6 GHz, a Q value greater than 600 in said microwave band, and an absolute value of a change ratio of a resonance frequency less than 100 ppm/.degree. C. in said microwave band in a temperature range from -25.degree. to 85.degree. C. ### Claim 10 (depends on 4) The microwave dielectric resonator according to claim 4, wherein said dielectric ceramic has a relative dielectric constant equal to or greater than 40 in a microwave band including the frequency range from 2 to 6 GHz, a Q value greater than 500 in said microwave band, and an absolute value of a change ratio of a resonance frequency less than 100 ppm/.degree. C. in said microwave band in a temperature range from -25.degree. to 85.degree. C. ### Claim 11 (depends on 5) The microwave dielectric resonator according to claim 5, wherein said dielectric ceramic has a relative dielectric constant equal to or greater than 40 in a microwave band including the frequency range from 2 to 6 GHz, a Q value greater than 500 in said microwave band, and an absolute value of a change ratio of a resonance frequency less than 100 ppm/.degree. C. in said microwave band in a temperature range from -25.degree. to 85.degree. C. ### Claim 12 (depends on 6) The microwave dielectric resonator according to claim 6, wherein said dielectric ceramic has a relative dielectric constant equal to or greater than 40 in a microwave band including the frequency range from 2 to 6 GHz, a Q value greater than 600 in said microwave band, and an absolute value of a change ratio of a resonance frequency less than 100 ppm/.degree. C. in said microwave band in a temperature range from -25.degree. to 85.degree. C.