# US 5,350,605 A · Process for the preparation of an optical structure and optical structure obtained thereby

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- Number: US 5,350,605 A
- Document ID: US5350605A
- Status: Granted
- Kind: A
- Application number: 08/148,422
- Filed: 1993-11-08
- Granted: 1994-09-27
- Earliest claimed: 1991-06-12
- Assignees: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Inventors: Jean-Christophe Rostaing; Francois Coeuret
- Web page: https://patentgrep.com/patent/US5350605A

## CPC

- G02B 1/105
- G02B 1/14: Protective coatings, e.g. hard coatings
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

The invention concerns the preparation of an optical structure. On a polymeric substrate there is first provided a surface activation, and the deposit of a layer of SiO.sub.2, 2000 .ANG. thick after which there is a deposit of a plurality of functional layers and finally a deposit of SiO.sub.2, 3 microns thick followed by a deposit of Si.sub.3 N.sub.4 /SiO.sub.x N.sub.y 3 microns thick, the latter being produced under radio-frequency polarization. The thus obtained optical structure has properties of adhesiveness, resistance to abrasion and to thermal impacts.

## Claims

### Claim 1

A process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate, comprising the following consecutive steps:
(a) plasma-activating a surface of the substrate with plasma based upon a gaseous mixture containing argon to form an activated surface;
(b) depositing a first layer of SiO.sub.2 onto the activated surface by a plasma enhanced chemical vapor deposition technique from silane and oxygen to form a first layer having a thickness of from about 2 to 5 microns;
(c) coating said first layer by a plasma enhanced chemical vapor deposition technique while the substrate is subjected to radio-frequency biasing with a second layer formed of a silicon nitride.

### Claim 2

The process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate, comprising the following consecutive steps:
(a) plasma-activating a surface of the substrate with a plasma based upon a gaseous mixture containing argon to form a plasma-activated surface;
(b) depositing a first layer of SiO.sub.2 onto the activated surface by plasma enhanced chemical vapor deposition from silane and oxygen to form a first layer having a thickness of from 2 to 5 microns;
(c) coating said first layer by plasma enhanced chemical vapor deposition with a second layer, said second layer comprising a complex having a composition intermediate between SiO.sub.2 and Si.sub.3 N.sub.4 with a minimum of Si--Si bonds while the substrate is subjected to radio-frequency biasing.

### Claim 3 (depends on 1)

The process according to claim 1 wherein the nitride compound of silicon contains silicon, hydrogen and nitrogen.

### Claim 4 (depends on 1)

The process according to claim 1 wherein said second layer has a thickness of from 2 to 50 microns.

### Claim 5 (depends on 1)

The process according to claim 1 further comprising depositing onto the activated surface a silicon-based under-layer by plasma enhanced chemical vapor deposition from silane.

### Claim 6 (depends on 2)

The process according to claim 2 further comprising depositing onto said activated surface a silicon-based under-layer by plasma enhanced vapor chemical vapor deposition from silane.

### Claim 7 (depends on 5)

The process according to claim 5 wherein at least one optical layer is deposited between said under-layer and said first layer.

### Claim 8 (depends on 6)

The process according to claim 6 wherein at least one optical layer is deposited between said under-layer and said first layer.

### Claim 9 (depends on 5)

The process according to claim 5 wherein the intermediate layer has a thickness of from 100 to 200 Angstroms.

### Claim 10 (depends on 6)

The process according to claim 6 wherein said intermediate layer has a thickness of from 100 to 200 Angstroms.

### Claim 11 (depends on 1)

The process according to claim 1 wherein the plasma activation of the surface is effected with a plasma selected from the group consisting of Ar/O.sub.2 plasma and successive Ar and Ar+NH.sub.3 plasmas.

### Claim 12 (depends on 2)

The process according to claim 2 wherein the plasma activation of the surface is effected with a plasma selected from the group consisting of Ar/O.sub.2 plasma and successive Ar and Ar+NH.sub.3 plasmas.

### Claim 13 (depends on 2)

The process according to claim 2 wherein the radio-frequency biasing of the substrate is performed so as to adjust the compressive stress of the layer at room temperature.

### Claim 14

In a process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate comprising plasma-activating a surface of the substrate, depositing a first layer of SiO.sub.2 onto the activated structure by plasma enhanced chemical vapor deposition technique from silane and oxygen to form a first layer;
the improvement comprising coating said first layer by a plasma enhanced chemical vapor deposition technique with a second layer formed from a silicon nitride compound while the substrate is subjected to radio-frequency biasing.

### Claim 15

In a process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate comprising plasma-activating a surface of the substrate, depositing a first layer of SiO.sub.2 onto the activated structure by plasma enhanced chemical vapor deposition technique from silane and oxygen to form a first layer;
the improvement comprising coating said first layer by a plasma enhanced chemical vapor deposition technique with a second layer of a complex of a composition which is intermediate between SiO.sub.2 and Si.sub.3 N.sub.4 with a minimum number of Si--Si bonds while the substrate is subjected to radio-frequency biasing.
