Low temperature P.sub.2 O.sub.5 oxide diffusion source
AssigneeTechneglas, Inc.
InventorsGary R. Pickrell, James E. Rapp
Life of this patent
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Abstract
The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.
Claims5
A composition for a solid diffusion source to deposit a phosphorus oxide coating on a silicon wafer, the composition consisting essentially of an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is about 1:5, and R is Nd Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy.
Dependencies are inferred from the claim text.