US 5,349,873 A · Force transducer and pressure detecting circuit using the same

Abstract

A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of <110> of the crystal or a direction equivalent to the direction of <110>; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.

Claims25

Dependent claims

A force transducer comprising:

(a) a silicon semiconductor having a face of (110) or a crystal face equivalent to the face of (110), on which a force is to be applied;
(b) a pair of input-output shared electrodes mounted on the crystal face of said silicon semiconductor in mutual confronting relationship in a direction of <110>
of the crystal or a direction equivalent to the direction of <110>;
(c) a force transmission block connected to the crystal face of said silicon semiconductor for transmitting the force perpendicularly to the crystal face;
(d) a support bed supporting said silicon semiconductor and connected to said silicon semiconductor at a face opposite to the crystal face to which said force transmission block is connected, whereby a voltage corresponding to the force and to be measured is output from said input-output shared electrodes when the force is applied perpendicularly to the crystal face of said silicon semiconductor via said force transmission block while a current flows in said silicon semiconductor via said input-output shared electrodes;
and
(e) wherein said pair of input-output shared electrodes are configured for a two-probe measurement.

4 more elements

A pressure detecting circuit comprising:

(I) a force transducer including (a) a silicon semiconductor having a face of (110), or a crystal face equivalent to the face of (110) on which a force is to be applied, (b) a pair of input-output shared electrodes mounted on the crystal face of said silicon semiconductor in mutual confronting relationship in a direction of <110>
of the crystal or a direction equivalent to the direction of <110>
, (c) a force transmission block connected to the crystal face of said silicon semiconductor for transmitting the force perpendicularly to the crystal face, and (d) a support bed supporting said silicon semiconductor and connected to said silicon semiconductor at a face opposite to the crystal face to which said force transmission block is connected, whereby a voltage corresponding to the force and to be measured is output from said input-output shared electrodes when the force is applied perpendicularly to the crystal face of said silicon semiconductor via said force transmission block while a current flows in said silicon semiconductor via said input-output shared electrodes;
(II) a constant current source for supplying a constant current to said input-output shared electrodes;
(III) means for measuring the force, which is applied perpendicularly to the crystal face, based on the voltage output from said input-output shared electrodes;
and
(e) wherein said pair of input-output shared electrodes are configured for a two-probe measurement.

4 more elements

A pressure detecting circuit comprising:

(I) a force transducer including (a) a silicon semiconductor having a face of (110), or a crystal face equivalent to the face of (110), on which a force is to be applied, (b) a pair of input-output shared electrodes mounted on the crystal face of said silicon semiconductor in mutual confronting relationship in a direction of <110>
of the crystal or a direction equivalent to the direction of <110>, (c) a force transmission block connected to the crystal face of said silicon semiconductor for transmitting the force perpendicularly to the crystal face, and (d) a support bed supporting said silicon semiconductor and connected to said silicon semiconductor at a face opposite to the crystal face to which said force transmission block is connected, whereby a voltage corresponding to the force and to be measured is output from said input-output shared electrodes when the force is applied perpendicularly to the crystal face of said silicon semiconductor via said force transmission block while a current flows in said silicon semiconductor via said input-output shared electrodes;
and
(II) a voltage divider in which a resistor is connected in series to said force transducer;
(III) a constant voltage source for impressing a constant voltage to said voltage divider;
(IV) means for measuring the force, which is applied perpendicularly to the crystal face, based on the voltage output from said voltage divider;
and
(e) wherein said pair of input-output shared electrodes are configured for a two-probe measurement.

5 more elements

Dependencies are inferred from the claim text.

Force transducer and pressure detecting circuit using the same

Life of this patent

Force transducer and pressure detecting circuit using the same

Life of this patent

Abstract

Claims25