# US 5,349,597 A · Semiconductor laser device and production method therefor

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- Number: US 5,349,597 A
- Document ID: US5349597A
- Status: Granted
- Kind: A
- Application number: 08/106,605
- Filed: 1993-08-16
- Granted: 1994-09-20
- Earliest claimed: 1992-08-25
- Assignees: Mitsubishi Denki Kabushiki Kaisha
- Inventors: Hitoshi Mizuochi
- Web page: https://patentgrep.com/patent/US5349597A

## CPC

- H10H 20/8242: {characterised by the dopants}
- H01S 5/305: {characterised by the doping materials used in the laser structure}
- H01S 5/3235: {emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H01S 5/2275: {mesa created by etching}
- H01S 5/3054: {p-doping}
- H01S 5/32391: {based on In(Ga)(As)P}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A semiconductor laser device includes a Zn-doped p type semiconductor substrate in which more than 81% of Zn dopant atoms are activated to produce carriers, and semiconductor layers epitaxially grown on the Zn-doped p type semiconductor substrate, including an active layer sandwiched between n type and p type cladding layers. Therefore, during the epitaxial growth of the semiconductor layers, diffusion of inactive Zn atoms from the substrate to semiconductor layers is reduced, with the result that the internal loss due to free carrier absorption in the active layer and the underlying p type cladding layer is reduced and non-radiative recombinations of carriers in the active layer are reduced.

## Claims

### Claim 1

A semiconductor laser device comprising:
a Zn-doped p type semiconductor substrate in which more than 81% of Zn dopant atoms are activated to produce carriers;
semiconductor layers successively disposed on said Zn-doped p type semiconductor substrate including an active layer sandwiched between two cladding layers; and
p side and n side electrodes electrically contacting said substrate and said semiconductor layers opposite said semiconductor substrate, respectively.

### Claim 2 (depends on 1)

The semiconductor laser device of claim 1 wherein said p type semiconductor substrate and said cladding layers comprise InP and said active layer comprises InGaAsP.

### Claim 3 (depends on 1)

The semiconductor laser device of claim 1 including:
a stripe shape mesa including said semiconductor layers; and
p-n-p current blocking structure disposed at opposite sides of said stripe mesa, including Zn-doped p type layers in which more than 81% of Zn dopant atoms are activated to produce carriers.

### Claim 4

A method for producing a semiconductor laser device comprising:
epitaxially growing semiconductor layers including an active layer on a Zn-doped p type semiconductor substrate in which more than 81% of Zn dopant atoms are activated to produce carriers; and
forming p side and n side electrodes on the rear surface of said substrate and said semiconductor layers opposite said semiconductor substrate, respectively.

### Claim 5

A method for producing a semiconductor laser device comprising:
forming a Zn-doped p type InP substrate containing Zn atoms in a concentration less than 6.3.times.10.sup.18 /cm.sup.3 by the Liquid Encapsulated Czochralski method, said substrate having a carrier concentration of 3.times.10.sup.18 /cm.sup.3 ;
epitaxially growing a p type InP cladding layer, an InGaAsP active layer, and an n type InP cladding layer on said Zn-doped p type InP substrate; and
forming p side and n side electrodes electrically contacting said substrate and said n type InP cladding layer, respectively.

### Claim 6 (depends on 5)

The method of claim 5 including adding Zn as a dopant while growing said p type cladding layer so that more than 81% of said Zn dopant atoms are activated to produce carriers.

### Claim 7 (depends on 5)

The method of claim 5 including:
forming said epitaxially grown layers into a stripe shape mesa; and
epitaxially growing a p-n-p current blocking structure at opposite sides of said mesa so that Zn dopant atoms are added to the p type layers of said current blocking structure and more than 81% of said Zn dopant atoms are activated to produce carriers.