# US 5,349,559 A · Internal voltage generating circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,349,559 A - Document ID: US5349559A - Status: Granted - Kind: A - Application number: 07/940,205 - Filed: 1992-08-18 - Granted: 1994-09-20 - Earliest claimed: 1991-08-19 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Yong-Bo Park; Hyung-Kyu Lim - Web page: https://patentgrep.com/patent/US5349559A ## CPC - G11C 5/147: {Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence)} - G05F 1/465: {Internal voltage generators for integrated circuits, e.g. step down generators} - G06F 1/28: Supervision thereof, e.g. detecting power-supply failure by out of limits supervision - G11C 11/4074: Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits - G11C 29/50: Marginal testing, e.g. race, voltage or current testing - G06F 2201/81: Threshold - G11C: STATIC STORES (semiconductor memory devices H10B) - G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) ## Abstract A circuit for generating an internal voltage to be supplied to memory elements of a semiconductor memory chip during normal operation and for providing an external voltage to the memory elements during a burn-in test operation. The circuit may be constructed with a driver circuit (50) which receives an external voltage and is controlled to generate the internal voltage. A comparator (300) compares the internal voltage to a first reference voltage to produce a control signal G2 to control the driver circuit (50). An external voltage detector (100) compares a second reference voltage to the external voltage to generate control signal B2. A driver control circuit (200) is enabled by control signal B2, if the external voltage is less than the second reference voltage, to pass control signal G2 to the driver circuit and thereby enable generation of the internal voltage to be equal to, or less than, the operating voltage of the semiconductor memory chip. The driver control circuit is disabled by control signal B2 if the external voltage is greater than the second reference voltage, thereby preventing the control signal G2 of the comparator from controlling conduction by the driver circuit (50) to enable output of the external voltage exhibiting an elevated amplitude to the memory elements for burn-in test operation. ## Claims ### Claim 1 A voltage generating circuit for use with a semiconductor memory device, for providing an internal voltage to said memory device during normal operation and for providing an external voltage during a burn-in test operation of said semiconductor memory device, said semiconductor memory device having a predetermined operating voltage, said voltage generating circuit comprising: driver means coupled to receive said external voltage, for generating said internal voltage from said external voltage in response to a first control signal; first comparing means for comparing said internal voltage to a first reference voltage to generate said first control signal; second comparing means for generating a second control signal representing a comparison between said external voltage and a second reference voltage, said second comparing means comprising: a first transistor having a first electrode of a principal electrically conducting channel connected to a first terminal of said external voltage and a control electrode coupled to receive said second control signal; voltage reducing means interposed between a second electrode of said principal electrically conducting channel of said first transistor and a common node, for reducing an amplitude of said external voltage; a resistor interposed between said common node and a second terminal of a reference potential; and differential amplifier means interposed between said first terminal of said external voltage and said second terminal of said reference potential and connected to said common node, for comparing said external voltage with said first reference voltage to provide said second control signal; and control means responsive to said second control signal, for enabling and disabling reception of said first control signal by said driver means, said driver means providing said internal voltage to said semiconductor memory device when said control means enables said first control signal to be received by said driver means, and said driver means providing said external voltage to said semiconductor memory device when said control means disables reception of said first control signal by said driver means. ### Claim 2 (depends on 1) The circuit of claim 1, wherein said second reference voltage is substantially the same as said predetermined operating voltage of said semiconductor memory device. ### Claim 3 (depends on 1) The circuit of claim 1, wherein said voltage reducing means comprises a plurality of diode connected transistors coupled in series between said first transistor and said resistor. ### Claim 4 (depends on 3) The circuit of claim 3, wherein said plurality of diode connected transistors are comprised of transistors. ### Claim 5 (depends on 4) The circuit of claim 4, wherein said control means comprises: transmission gating means having a control terminal coupled to receive said second control signal and a channel responsive to said second control signal, for enabling and disabling reception of said first control signal by said driver means; and a second transistor providing a principal current conducting path connected between a second local potential and said channel of said transmission gating means, said second transistor having a control electrode connected to said control terminal of said transmission gating means. ### Claim 6 (depends on 1) The circuit of claim 1, wherein said control means comprises: transmission gating means having a control terminal coupled to receive said second control signal and a channel responsive to said second control signal, for enabling and disabling reception of said first control signal by said driver means; and a transistor providing a principal current conducting path connected between a second local potential and said channel of said transmission gating means, said transistor having a control electrode connected to said control terminal of said transmission gating means. ### Claim 7 A circuit for converting an externally applied voltage having a first amplitude into an internal exhibiting a second amplitude, said circuit comprising; comparing means coupled to receive a reference voltage and said internal voltage, for providing a first control signal in response to said internal voltage relative to said reference voltage; sensing means for generating a second control signal in dependence upon variations in said externally applied voltage, said second control signal having one of first and second logic states of opposite polarity determined in dependence upon said first amplitude of said externally applied voltage; driving means for producing one of said internal voltage and said externally applied voltage in response to said first control signal; and control means for regulating transmission of said first control signal to said driving means according to logic states of said second control signal. ### Claim 8 (depends on 7) The circuit of claim 7, wherein a control electrode of said driving means is coupled by said control means to receive said first control signal while said second control signal exhibits said first logic state, and said control electrode is prevented by said control means from receiving said first control signal while said second control signal exhibits said second logic state different from said first logic state. ### Claim 9 A voltage generating circuit for providing an internal voltage and an elevated voltage greater than said internal voltage, to a semiconductor memory device, said voltage generating circuit comprising: first comparison means for comparing an external voltage to a first reference voltage to generate a first control signal, said first comparison means comprising: transistor means having a first end of a channel connected to said external voltage and a control terminal providing said first control signal; voltage dividing means connected to a second end of said channel of said transistor means, for dividing said external voltage to generate a divided voltage; and differential amplifier means for comparing said first reference voltage and said divided voltage to generate said first control signal; second comparison means for comparing said internal voltage to a second reference voltage to generate a second control signal; control means for enabling transmission of said second control signal in dependence upon said first control signal; and driver means coupled to receive said external voltage, for providing one of said internal voltage and said elevated voltage to said semiconductor memory device in response to receipt of said second control signal transmitted from said control means. ### Claim 10 (depends on 9) The voltage generating circuit as claimed in claim 9, wherein said voltage dividing means comprises: a plurality of serially connected diode-connected transistors having a first end coupled to said second end of said channel of said transistor means, and a second end to a node providing said divided voltage; and a resistor interposed between said node and a third reference voltage. ### Claim 11 (depends on 9) The voltage generating circuit as claimed in claim 9, wherein said control means comprises: switch means for enabling transmission of said second control signal to said driver means when said first control signal is in a first logic state to enable said driver means to generate said internal voltage; and pull-down means for discharging voltages of said second control signal from said driver means when said first control signal is in a second logic state opposite to said first logic state to enable said driver means to generate said elevated voltage. ### Claim 12 (depends on 11) The voltage generating circuit as claimed in claim 11, wherein said pull-down means is a transistor having a first electrode of a principal electrically conducting channel coupled to receive said third reference voltage, a second electrode of said principal electrically conducting channel connected to said control electrode of said driver means and a control electrode coupled to receive said first control signal. ### Claim 13 A voltage generating circuit for converting an externally applied voltage having a first amplitude into an internal voltage exhibiting a second amplitude, comprising: comparing means coupled to receive a reference voltage and said internal voltage, for providing a first control signal in response to said internal voltage relative to said reference voltage; sensing means for generating a second control signal in dependence upon variations in said externally applied voltage, said second control signal having one of first and second logic states of opposite polarity determined in dependence upon said first amplitude of said externally applied voltage; driving means for providing one of said internal voltage and said externally applied voltage in dependence upon said first control signal; and control means for regulating transmission of said first control signal to said driving means according to logic states of said second control signal, said control means comprising: switch means for enabling transmission of said first control signal to said driving means when said second control signal is in said first logic state to enable said driving means to generate said internal voltage; and pull-down means for discharging voltages of said first control signal from said driving means when said second control signal is in said second logic state to enable said driving means to generate said externally applied voltage. ### Claim 14 (depends on 13) The voltage generating circuit as claimed in claim 13, wherein said pull-down means is a transistor having a first electrode of a principal electrically conducting channel coupled to receive a reference voltage, a second electrode of said principal electrically conducting channel connected to said control electrode of said driver means and a control electrode coupled to receive said second control signal. ### Claim 15 (depends on 13) The voltage generating circuit as claimed in claim 13, wherein said switch means is a transmission gate for enabling transmission of said first control signal to said driving means in dependence upon the logic states of said second control signal, said transmission gate having control electrodes coupled to receive said second control signal, and a principal electrically conducting channel interposed between said comparing means and said driving means, for enabling transmission of said first control signal. ### Claim 16 (depends on 13) The voltage generating circuit as claimed in claim 13, wherein said sensing means comprises: differential amplifier means for comparing said externally applied voltage with a first reference voltage to provide said first control signal; a pull-up transistor having a first electrode of a principal electrically conducting channel connected to a first terminal and a control electrode coupled to receive said first control signal; a plurality of diode-connected transistors serially connected between a second electrode of said principal electrically conducting channel of said pull-up transistor and a common node, for reducing an amplitude of said externally applied voltage; resistor means interposed between said common node and a second terminal. ### Claim 17 A voltage generating circuit for providing an internal voltage and an elevated voltage to a semiconductor memory device, comprising: detecting means for generating a first control signal of a first logic state when an external voltage is less than a first reference voltage, and for generating said first control signal of a second logic state when said external voltage is greater than said first reference voltage, said detecting means comprising: differential amplifier means interposed between a first terminal of said external voltage and a second terminal of a reference potential, for comparing said external voltage with said first reference voltage to provide said first control signal; and transistor means having a first electrode of a principal electrically conducting channel connected to said first terminal, a second electrode of said principal electrically conducting channel connected to said second terminal via a plurality of serially connected diode-connected transistors, and a control electrode coupled to receive said first control signal; comparing means for comparing said internal voltage to said first reference voltage to generate a second control signal; driving means connected to said external voltage, for providing one of said internal voltage and said elevated voltage to the semiconductor memory device in dependence upon said second control signal; and control means for enabling transmission of said second control signal to said driving means when said first control signal is in said first logic state, and discharging voltages of said second control signal from said driving means when said first control signal is in said second logic state. ### Claim 18 (depends on 17) The voltage generating circuit as claimed in claim 17, wherein said control means comprises: a transmission gate for enabling transmission of said second control signal to said driving means in dependence upon said first control signal, said transmission gate having control electrodes coupled to receive said first control signal and a principal electrically conducting channel interposed between said comparing means and said driving means; and a pull-down transistor having a first electrode of a principal electrically conducting channel connected to said second terminal of said reference potential, a second electrode of said principal electrically conducting channel connected to said driving means, and a control electrode coupled to receive said first control signal. ### Claim 19 A voltage generating circuit for a semiconductor memory device, comprising: a first terminal for providing a first reference voltage; a second terminal for providing a second reference voltage; a third terminal for providing a third reference voltage; an input terminal for receiving an external voltage; an output terminal for providing one of an internal voltage and said external voltage; external voltage detector means for generating a first control signal in dependence upon comparison of said external voltage with said reference voltage; comparator means for generating a second control signal in dependence upon comparison of said internal voltage with said second reference voltage; driving transistor means for generating one of said internal voltage and said external voltage at said output terminal in dependence upon said second control signal, said driving transistor means having a first electrode of a principal electrically conducting channel connected to said input terminal, a second electrode of said principal electrically conducting channel connected to said output terminal, and a control electrode coupled to respond to said second control signal; and driver control means for controlling said driving transistor means to generate one of said internal voltage and said external voltage by regulating transmission of said second control signal to said driving transistor means in dependence upon logic states of said first control signal, said driver control means comprising: a transmission gate for enabling transmission of said second control signal to said driving transistor means in dependence upon said first control signal, said transmission gate having a control electrode coupled to receive said first control signal and a principal electrically conducting channel interposed between said third terminal and said control electrode of said driving transistor means; and a pull-down transistor for discharging a voltage of said second control signal into said third terminal in dependence upon said first control signal, said pull-down transistor having a first electrode of a principal electrically conducting channel connected to said third terminal, a second electrode of said principal electrically conducting channel connected to said control electrode of said driving transistor means and a control electrode coupled to receive said first control signal. ### Claim 20 (depends on 19) The voltage generating circuit as claimed in claim 19, wherein said first control signal is representative of a logic "LOW" state when said external voltage is smaller than said first reference voltage, and is representative of a logic "HIGH" state when said external voltage is greater than said first reference voltage. ### Claim 21 (depends on 20) The voltage generating circuit as claimed in claim 20, wherein said external voltage detector means comprises: a pull-up transistor having a first electrode of a principal electrically conducting channel connected to said first terminal and a control electrode coupled to receive said first control signal; a plurality of diode-connected transistors serially connected between a second electrode of said principal electrically conducting channel of said pull-up transistor and a common node, for reducing an amplitude of said external voltage; a resistor interposed between said common node and said third terminal; and differential amplifier means interposed between said common node and said first terminal, for comparing said external voltage with said first reference voltage to provide said first control signal.