# US 5,349,494 A · Semiconductor device with capacitor insulating film and method for fabricating the same

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- Number: US 5,349,494 A
- Document ID: US5349494A
- Status: Granted
- Kind: A
- Application number: 07/920,921
- Filed: 1992-07-28
- Granted: 1994-09-20
- Earliest claimed: 1991-07-29
- Assignees: NEC Corporation
- Inventors: Koichi Ando
- Web page: https://patentgrep.com/patent/US5349494A

## CPC

- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10D 1/68: Capacitors having no potential barriers
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10P 14/6316: {Formation by nitridation, e.g. nitridation of the substrate}
- H10P 14/6322: {Formation by thermal treatments (formation by plasma treatment H10P14/6319)}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6522: {introduced into a nitride material, e.g. changing SiN to SiON}
- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device has a capacitor insulating film composed of a first and a second silicon nitride film. The surface of a lower electrode of impurity-doped polysilicon is transformed into the first silicon nitride film by thermal nitriding, and thereafter the second silicon nitride film is formed by chemical vapor deposition. An upper electrode is formed on the second silicon nitride film. A silicon oxide film may be formed on the second silicon nitride film by thermal oxidation. The capacitor insulating film which has a thickness of 5 nm or less in equivalent thickness of an oxide film reduces a leakage current and improves a long-term product reliability.

## Claims

### Claim 1

A semiconductor device comprising:
a lower electrode of impurity-doped polysilicon formed on an electrical insulating film on a semiconductor substrate;
a capacitor insulating film covering said lower electrode, said capacitor insulating film including a first silicon nitride film formed by thermal nitriding and a second silicon nitride film formed by chemical vapor deposition, said first silicon nitride film being disposed on essentially only said lower electrode and said second silicon nitride film being disposed on an entire surface of said semiconductor device; and
an upper electrode covering said capacitor insulating film.

### Claim 2 (depends on 1)

A semiconductor device according to claim 1, wherein said second silicon nitride film has a thickness of approximately 4 nanometers.

### Claim 3 (depends on 1)

A semiconductor device according to claim 1, wherein said first silicon nitride film has a greater thickness than that of said second silicon nitride film as measured by capacitance of an equivalent thickness of a silicon oxide film.

### Claim 4 (depends on 1)

A semiconductor device according to claim 1, wherein said capacitor insulating film further includes a silicon oxide film formed on said second silicon nitride film by thermal oxidation.

### Claim 5 (depends on 1)

A semiconductor device according to claim 1, wherein said upper electrode is made of polycrystalline silicon.

### Claim 6

A method for fabricating a semiconductor device having a lower electrode of impurity-doped polysilicon formed on an electrical insulating film on a semiconductor substrate, a capacitor insulating film covering said lower electrode, and an upper electrode covering said capacitor insulating film, comprising the steps of:
forming a first silicon nitride film essentially only on a surface of said lower electrode by thermal nitriding of said lower electrode after forming said lower electrode at a predetermined position on a surface of said electrical insulating film, said electrical insulating film being formed on said semiconductor substrate;
forming a second silicon nitride film by chemical vapor deposition to cover an entire resultant surface after a formation of said first silicon nitride film in the previous step; and
forming said upper electrode to cover said second silicon nitride film.

### Claim 7 (depends on 6)

A method for fabricating a semiconductor device according to claim 6, further comprising, after the step of forming the second silicon nitride film, tile step of forming a silicon oxide film on said second silicon nitride film by thermal oxidation.