# US 5,349,308 A · Amplifier using a follower transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,349,308 A - Document ID: US5349308A - Status: Granted - Kind: A - Application number: 08/010,866 - Filed: 1993-01-29 - Granted: 1994-09-20 - Earliest claimed: 1992-01-31 - Assignees: Thomson-CSF Semiconducteurs Specifiques - Inventors: Jean-Charles Grasset - Web page: https://patentgrep.com/patent/US5349308A ## CPC - H03F 3/50: Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower - H03F: AMPLIFIERS ## Abstract The disclosure relates to amplifiers using emitter follower type transistors and, more particularly, to means for the biasing of these emitter followers. The amplifier includes a follower transistor, a biasing circuit injecting a base biasing current into the base of the follower transistor, a current generator connecting the emitter of the follower transistor to a supply potential. According to one characteristic, the biasing circuit includes, firstly, a transistor called an image transistor, the emitter of which is connected to the emitter of the follower transistor and, secondly, a current injector for the injection, into the base of the follower transistor, of a current constituting a replica of the base current of the image transistor. One of the advantages of this arrangement is that it can be used to obtain the biasing circuit with transistors that are all of a same type, NPN or PNP, as the follower transistor. ## Claims ### Claim 1 An amplifier for receiving an input signal and delivering an output signal, comprising: a biasing circuit; a transistor called a follower transistor, having its collector connected to a first supply potential and its emitter connected to a second supply potential by a current generator, the follower transistor delivering, at its emitter, said output signal that corresponds to said input signal applied to its base, the follower transistor being biased by the biasing circuit; wherein the biasing circuit includes: a transistor called an image transistor, the emitter current of which, called an image current, is a replica of the emitter current called the emitter bias current of the follower transistor, the emitter bias current and the image current going through the current generator; means for injecting into the base of the follower transistor a current constituting a replica of the base current of the image transistor; and means for setting the emitter current of the image transistor to the difference between the total current imposed by the current generator and the emitter bias current of the follower transistor. ### Claim 2 (depends on 1) An amplifier device according to claim 1, wherein the image transistor is of a same type (NPN) as the follower transistor. ### Claim 3 (depends on 2) An amplifier device according to claim 2, wherein the emitters of the follower transistor and of the image transistor are connected together. ### Claim 4 (depends on 1) An amplifier device according to claim 1, wherein the image transistor and the follower transistor are paired. ### Claim 5 (depends on 1, 2, 3, 4) An amplifier device according to any one of claims 1, 2, 3 and 4, wherein the emitter bias current and the image current have a same value. ### Claim 6 An amplifier comprising: a biasing circuit; a transistor called a follower transistor, having its collector connected to a first supply potential and its emitter connected to a second supply potential by a current generator, the follower transistor delivering, at its emitter, an output signal that corresponds to an input signal applied to its base, the following transistor being biased by the biasing circuit; wherein the biasing circuit includes: a transistor called an image transistor, the emitter current of which, called an image current, is a replica of the emitter current called the emitter bias current of the follower transistor, the emitter bias current and the image current going through the current generator; and means for injecting into the base of the follower transistor a current constituting a replica of the base current of the image transistor; wherein said amplifier further comprises a third transistor and a fourth transistor mounted in common collector mode, the bases of said third and fourth transistors being connected to the collector of the image transistor, the emitter of the third transistor being connected to the base of the image transistor and the emitter of the fourth transistor being connected to the base of the follower transistor. ### Claim 7 (depends on 6) An amplifier device according to claim 6, wherein the image transistor and the third and fourth transistors are of a same type (NPN) as the follower transistor. ### Claim 8 (depends on 6, 7) An amplifier device according to either of the claims 6 or 7, wherein the third and the fourth transistors are paired. ### Claim 9 (depends on 6, 7) An amplifier device according to either of the claims 6 or 7, wherein the follower transistor, the image transistor and the third and fourth transistors are all of the NPN type. ### Claim 10 (depends on 1, 6) An amplifier device according to any one of claims 1 or 6, wherein the biasing circuit comprises a Wilson mirror type of circuit. ### Claim 11 (depends on 1, 6) An amplifier device according to any one of the claims 1 or 6, wherein the biasing circuit further includes a Wilson mirror type of circuit connecting the image transistor to the means for setting the emitter current. ### Claim 12 (depends on 1, 6) An amplifier device according to any one of the claims 1 or 6, wherein the means for injecting includes an active load. ### Claim 13 (depends on 1, 6) An amplifier according to any one of the claims 1 or 6, wherein the second supply potential is ground. ### Claim 14 (depends on 6) An amplifier according to claim 6, wherein said amplifier has an input and an output, said input and said output respectively being said base and said emitter of said follower transistor.