# US 5,349,216 A · Charge coupled device image sensor

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- Number: US 5,349,216 A
- Document ID: US5349216A
- Status: Granted
- Kind: A
- Application number: 08/076,336
- Filed: 1993-06-11
- Granted: 1994-09-20
- Earliest claimed: 1992-06-12
- Assignees: Gold Star Electron Co., Ltd.
- Inventors: Seo K. Lee; Uja Shinji
- Web page: https://patentgrep.com/patent/US5349216A

## CPC

- H10F 39/158: {having arrangements for blooming suppression}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source.

## Claims

### Claim 1

A CCD image sensor comprising:
a semiconductor substrate of a first conductivity type connected to a ground;
an impurity region of a second conductivity type formed in a surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer;
an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer;
an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region;
an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer;
silicide films filled in the contact holes; and
a light shield conductor film which is formed on a surface of the insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source.

### Claim 2 (depends on 1)

A CCD image sensor as set forth in claim 1, wherein the first conductivity type is p conductivity type and the second conductivity type is n conductivity type.

### Claim 3 (depends on 1)

A CCD image sensor as set forth in claim 1, wherein the impurity region of the second conductivity type serving as a blooming prevention layer has a concentration higher than that of the impurity region of the second conductivity type serving as a light receiving region.

### Claim 4 (depends on 1)

A CCD image sensor, as set forth in claim 1, wherein the light shield conductor film is made of either a metal or a conductive polysilicon.

### Claim 5 (depends on 1)

A CCD image sensor, as set forth in claim 1, wherein the semiconductor substrate of the first conductivity type is made of silicon.