# US 5,349,211 A · Semiconductor infrared emitting device with oblique side surface with respect to the cleavage

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- Number: US 5,349,211 A
- Document ID: US5349211A
- Status: Granted
- Kind: A
- Application number: 08/036,232
- Filed: 1993-03-24
- Granted: 1994-09-20
- Earliest claimed: 1992-03-26
- Assignees: NEC Corporation
- Inventors: Tetsuro Kato
- Web page: https://patentgrep.com/patent/US5349211A

## CPC

- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/01: Manufacture or treatment
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor infrared emitting device is fabricated from an n-type gallium arsenide substrate, an n-type gallium arsenide layer on the top surface of the substrate, a p-type gallium arsenide layer formed on the n-type gallium arsenide layer for forming a p-n junction therebetween, and electrodes provided on the p-type gallium arsenide layer and the reverse surface of the substrate for applying a bias voltage to the p-n junction, and the side surface of the substrate declines from the cleavage surface of the gallium arsenide substrate so that the incident angle of infrared varies at the crystal surfaces, thereby allowing the infrared to be radiated from the semiconductor infrared emitting device.

## Claims

### Claim 1

A semiconductor infrared emitting device comprises:
a) a substrate of one conductivity type formed of a first compound semiconductor, and having a reverse surface, a top surface substantially parallel to said reverse surface and side surfaces obliquely extending from said top surface at a predetermined angle;
b) a first film of said one conductivity type formed of a second compound semiconductor, and provided on said top surface of said substrate;
c) a second film of the opposite conductivity type formed of a third compound semiconductor, and provided on said first film for forming a p-n junction therebetween;
d) a first electrode formed on said second film, biased for producing said infrared light around said p-n junction; and
e) a second electrode formed on said reverse surface of said substrate.

### Claim 2 (depends on 1)

A semiconductor infrared emitting device as set forth in claim 1, in which said first, second and third compound semiconductors are gallium arsenide.

### Claim 3 (depends on 2)

A semiconductor infrared emitting device as set forth in claim 2, in which said predetermined angle is varied from said top surface so that said side surfaces are non-flat surfaces.

### Claim 4 (depends on 3)

A semiconductor infrared emitting device as set forth in claim 3, in which the absolute value of said predetermined angle is greater than zero and less than 90 degrees.

### Claim 5 (depends on 3)

A semiconductor infrared emitting device as set forth in claim 3, in which the absolute value of said predetermined angle ranges from 5 degrees to 85 degrees.

### Claim 6 (depends on 2)

A semiconductor infrared emitting device as set forth in claim 2, in which said side surfaces are substantially flat.

### Claim 7 (depends on 6)

A semiconductor infrared emitting device as set forth in claim 6, in which the absolute value of said predetermined angle is greater than zero and less than 90 degrees.

### Claim 8 (depends on 6)

A semiconductor infrared emitting device as set forth in claim 6, in which the absolute value of said predetermined angle ranges from 5 degrees to 85 degrees.

### Claim 9 (depends on 7)

A semiconductor infrared emitting device as set forth in claim 7, in which the absolute value of said predetermined angle is adjusted to 10 degrees.