# US 5,349,208 A · GaP light emitting element substrate with oxygen doped buffer

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- Number: US 5,349,208 A
- Document ID: US5349208A
- Status: Granted
- Kind: A
- Application number: 08/147,480
- Filed: 1993-11-05
- Granted: 1994-09-20
- Earliest claimed: 1992-11-07
- Assignees: Shin-Etsu Handotai Co., Ltd.
- Inventors: Munehisa Yanagisawa; Susumu Higuchi; Yuuki Tamura
- Web page: https://patentgrep.com/patent/US5349208A

## CPC

- H10H 20/8242: {characterised by the dopants}
- H10W 72/30: Die-attach connectors
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.

## Claims

### Claim 1

A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is 6.times.10.sup.15 [atoms/cc] or less.