# US 5,349,205 A · Thin-film transistor array with anodic oxide for use in a liquid crystal display

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- Number: US 5,349,205 A
- Document ID: US5349205A
- Status: Granted
- Kind: A
- Application number: 07/983,826
- Filed: 1992-12-01
- Granted: 1994-09-20
- Earliest claimed: 1991-12-02
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Ikunori Kobayashi; Kazuyoshi Nakamura; Koji Matsunaga; Mamoru Takeda; Tomizo Matsuoka
- Web page: https://patentgrep.com/patent/US5349205A

## CPC

- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- G02F 1/136295: {Materials; Compositions; Manufacture processes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A thin-film transistor array is suited for the manufacture of an image display utilizing liquid crystal. In the thin-film transistor array, a first electrically conductive layer made principally of aluminum is selectively formed on one surface of a substrate. The first electrically conductive layer contains, as an impurity, a high-melting point metal which can be anodized. An oxide layer is formed by an anodization process on the first electrically conductive layer, and the first insulating layer is formed on the oxide layer so as to overlay the substrate. Furthermore, a first semiconductor layer made principally of silicon is selectively formed on the insulating layer, and a pair of second semiconductor layers made principally of silicon containing phosphorus are formed on the first semiconductor layer. A pair of second electrically conductive layers are formed on the paired second semiconductor layers, respectively.

## Claims

### Claim 1

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:
a substrate;
a first electrically conductive layer made principally of aluminum and selectively formed on one surface of said substrate, said first electrically conductive layer containing, as an impurity, a high-melting point metal which can be anodized;
an oxide layer formed by an anodization process on said first electrically conductive layer;
a first insulating layer formed on said oxide layer so as to overlay said substrate;
a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer; and
a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

### Claim 2 (depends on 1)

The thin-film transistor array according to claim 1, wherein said high-melting point metal is any one of tantalum, titanium, molybdenum, tungsten, hafnium, niobium, zirconium, and vanadium.

### Claim 3 (depends on 1)

The thin-film transistor array according to claim 1, further comprising a second insulating layer selectively formed on said first non-monocrystalline semiconductor layer.

### Claim 4

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:
a substrate;
a first electrically conductive layer made principally of aluminum and selectively formed on one surface of said substrate, said first electrically conductive layer containing, as an impurity, a high-melting point metal which can be anodized, said first electrically conductive layer has a gradient in concentration of said high-melting point metal, which gradually changes in a direction perpendicular thereto;
an oxide layer formed by an anodization process on said first electrically conductive layer;
a first insulating layer formed on said oxide layer so as to overlay said substrate;
a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer; and
a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

### Claim 5 (depends on 4)

The thin-film transistor array according to claim 4, wherein said high-melting point metal is any one of tantalum, titanium, molybdenum, tungsten, hafnium, niobium, zirconium, and vanadium.

### Claim 6 (depends on 4)

The thin-film transistor array according to claim 4, further comprising a second insulating layer selectively formed on said first non-monocrystalline semiconductor layer.

### Claim 7

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:
a substrate;
a first electrically conductive layer made principally of aluminum and selectively formed on one surface of said substrate;
an oxide layer formed by an anodization process on said first electrically conductive layer, said oxide layer containing, as an impurity, a high-melting point metal which can be anodized;
a first insulating layer formed on said oxide layer so as to overlay said substrate;
a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer; and
a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

### Claim 8 (depends on 7)

The thin-film transistor array according to claim 7, wherein said high-melting point metal is any one of tantalum, titanium, molybdenum, tungsten, hafnium, niobium, zirconium, and vanadium.

### Claim 9 (depends on 7)

The thin-film transistor array according to claim 7, further comprising a second insulating layer selectively formed on said first non-monocrystalline semiconductor layer.

### Claim 10

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:
a substrate;
a first electrically conductive layer having a double-layered structure including a first layer selectively formed on one surface of said substrate and a second layer formed on said first layer, said first layer being made of aluminum containing at least one of silicon and copper, said second layer being made of aluminum containing, as an impurity, a high-melting point metal which can be anodized;
an oxide layer formed by an anodization process on said first electrically conductive layer;
a first insulating layer formed on said oxide layer so as to overlay said substrate;
a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer; and
a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

### Claim 11 (depends on 10)

The thin-film transistor array according to claim 10, wherein said high-melting point metal is any one of tantalum, titanium, molybdenum, tungsten, hafnium, niobium, zirconium, and vanadium.

### Claim 12 (depends on 10)

The thin-film transistor array according to claim 10, further comprising a second insulating layer selectively formed on said first non-monocrystalline semiconductor layer.

### Claim 13

A thin-film transistor array suited for use in a liquid crystal display, said thin-film transistor array comprising:
a substrate;
a first electrically conductive layer having a double-layered structure including a first layer selectively formed on one surface of said substrate and a second layer formed on said first layer, said first layer being made of pure aluminum, said second layer being made of aluminum containing a high-melting point metal as an impurity;
an oxide layer formed by an anodization process on said first electrically conductive layer;
a first insulating layer formed on said oxide layer so as to overlay said substrate;
a first non-monocrystalline semiconductor layer made principally of silicon and selectively formed on said insulating layer, a portion of said first non-monocrystalline semiconductor layer being positioned above said first electrically conductive layer;
a pair of second non-monocrystalline semiconductor layers made principally of silicon containing phosphorus, said second non-monocrystalline semiconductor layers being formed on said first non-monocrystalline semiconductor layer; and
a pair of second electrically conductive layers formed on said pair of second non-monocrystalline semiconductor layers, respectively, at least a portion of each of said second electrically conductive layers being positioned above said first non-monocrystalline semiconductor layer.

### Claim 14 (depends on 13)

The thin-film transistor array according to claim 13, wherein said high-melting point metal is any one of tantalum, titanium, molybdenum, tungsten, hafnium, niobium, zirconium, and vanadium.

### Claim 15 (depends on 13)

The thin-film transistor array according to claim 13, further comprising a second insulating layer selectively formed on said first non-monocrystalline semiconductor layer.