# US 5,349,196 A · Ion implanting apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,349,196 A
- Document ID: US5349196A
- Status: Granted
- Kind: A
- Application number: 08/043,794
- Filed: 1993-04-07
- Granted: 1994-09-20
- Earliest claimed: 1992-04-10
- Assignees: Hitachi, Ltd.
- Inventors: Kensuke Amemiya; Yoshimi Hakamata; Katsumi Tokiguchi; Noriyuki Sakudo
- Web page: https://patentgrep.com/patent/US5349196A

## CPC

- H01J 37/3007: {Electron or ion-optical systems}
- H01J 37/3171: {for ion implantation}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.

## Claims

### Claim 1

An ion implanting unit comprising:
an ion source for generating a beam including various kinds of ions,
a multipole lens for carrying out mass spectrometry of a beam including various kinds of ions from said ion source while converging the beam,
a radio frequency accelerator for accelerating an ion beam from said multipole lens to a predetermined energy level with a radio frequency field, and
an ion implanting chamber for implanting an ion beam from said radio frequency accelerator into a material to be processed.

### Claim 2 (depends on 1)

An ion implanting unit according to claim 1, wherein said multipole lens is a magnetic field type quadrupole lens.

### Claim 3 (depends on 2)

An ion implanting unit according to claim 2, wherein said magnetic field type quadrupole lens has at least three stages.

### Claim 4 (depends on 1)

An ion implanting unit according to claim 1, wherein said radio frequency accelerator is a quadrupole particle accelerator including quadrupole electrodes having mutually facing planes formed in a wave shape.

### Claim 5 (depends on 1)

An ion implanting unit according to claim 1, wherein said radio frequency accelerator includes an accelerating tube and radio frequency resonance circuit disposed outside said accelerating tube.

### Claim 6 (depends on 1)

An ion implanting unit according to claim 1, further comprising a beam deflector disposed between said radio frequency accelerator and said ion implanting chamber, said beam deflector being for varying an angle at which ions are implanted into said material to be processed.

### Claim 7 (depends on 6)

An ion implanting unit according to claim 6, wherein said beam deflector is a magnetic analyzer.