Material-saving process for fabricating mixed crystals
AssigneeAixtron SE
InventorsHolger Jurgensen, Klaus Gruter, Marc Deschler, Pieter Balk
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Abstract
Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.
Claims13
A process for fabricating mixed crystals comprising:
- transferring at least one component of a composition of the mixed crystal in a reactor from a source into a vapor phase containing hydrogen and chloride compounds, said chloride compounds comprising at least HCl, a carrier gas, and said component;
- transporting the vapor phase to a substrate;
- precipitating the vapor phase on said substrate;
- and varying a growth rate between 1 .mu.m/h and 500 .mu.m/h, wherein the step of varying the growth rate includes the steps of varying the overall pressure of the vapor phase between 80 mbar and 1 mbar, and varying the HCl partial pressure in the vapor phase between 5*10.sup.-6 bar and 5*10.sup.-3 bar.
Dependencies are inferred from the claim text.