# US 5,348,906 A · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,348,906 A - Document ID: US5348906A - Status: Granted - Kind: A - Application number: 08/026,098 - Filed: 1993-03-04 - Granted: 1994-09-20 - Earliest claimed: 1990-08-31 - Assignees: Fujitsu Limited - Inventors: Shuichi Harajiri - Web page: https://patentgrep.com/patent/US5348906A ## CPC - H10D 64/011: {of electrodes ohmically coupled to a semiconductor} - H10P 90/1906: {Preparing SOI wafers} - H10W 10/012: {using local oxidation of silicon [LOCOS]} - H10W 10/061: {using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations} - H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI] - H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers} - H10W 10/041: {of isolation regions comprising polycrystalline semiconductor materials} - H10W 10/40: Isolation regions comprising polycrystalline semiconductor materials - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In a manufacturing method of a semiconductor device in the field of large-scale integrated circuits utilizing a trench isolation technique; said method includes the steps of: forming first and second films having stepped portions on first and second underlying films adjacent to one another; forming a conductive film so that the first and second films having stepped portions are also covered; forming a first resist mask for forming gate electrodes on the conductive film and simultaneously forming a second resist mask on at least part of the conductive film corresponding to the stepped portions of the first and second films, the first and second resist masks being simultaneously formed; dry-etching the conductive film through the first and second resist masks to form gate electrodes while leaving the conductive film on the stepped portions of the first and second films; and removing the first and second resist masks. ## Claims ### Claim 1 A method of manufacturing a semiconductor device comprising the steps of: forming a first film having first stepped portions formed on a semiconductor substrate; forming an insulating film having second stepped portions covering the surface of the first film to extend over the first stepped portions; forming a conductive film completely covering the first stepped portions of the first film and the second stepped portions of the insulating film by extending from an upper part to a lower part of the second stepped portions; forming a first resist mask for forming gate electrodes on the conductive film and simultaneously forming a second resist mask wholly covering the conductive film corresponding to the second stepped portions of the insulating film, the first and second resist masks being simultaneously formed; dry-etching the conductive film through the first and second resist masks; and removing the first and second resist masks, leaving a portion of the conductive film to cover the first stepped portions of the first film and the second stepped portions of the insulating film. ### Claim 2 (depends on 1) The method of claim 1 wherein upon forming a gate of wiring electrode pattern on a substrate of a semiconductor element having a steep stepped portion, the patterning is performed by forming a pattern of material for the gate or wiring electrode on the lower portion of the stepped portion or the lower and upper flat portions thereof so that the edge of the stepped portion is simultaneously included in the pattern. ### Claim 3 (depends on 2) The method of claim 2 wherein on a grooved substrate for a semiconductor element, the first stepped portion is formed by part of an insulating film projecting from the upper portion of the groove and spreading over the surface of the substrate. ### Claim 4 (depends on 2) The method of claim 2 wherein a polysilicon film is formed within the groove on the grooved substrate for a semiconductor element and the first stepped portion is formed by part of an polysilicon film projecting from the upper portion of the groove and spreading over the surface of the substrate. ### Claim 5 (depends on 2) The method of claim 2 wherein an amorphous silicon film is formed within the groove on the grooved substrate for a semiconductor element and the first stepped portion is formed from part of the amorphous silicon film projecting from the upper portion of the groove and spreading over the surface of the substrate. ### Claim 6 (depends on 4) The method of claim 4 wherein on the grooved substrate of a semiconductor element, the first film is formed of polysilicon and the second stepped portion of said insulating film is formed from an oxidized silicon layers projected from the upper portion of the groove. ### Claim 7 (depends on 5) The method of claim 5 wherein on the grooved substrate of a semiconductor element, the first film is formed of polysilicon and the second stepped portions of said insulating film is formed from an oxidized silicon layer projected from the upper portion of the groove. ### Claim 8 A method of manufacturing a semiconductor device, comprising the steps of: forming first and a second films having stepped portions on first and second underlying films adjacent to one another; forming a conductive film so that the first and second film having stepped portions are also covered; forming a first resist mask for forming mate electrodes on the conductive film and simultaneously forming a second resist mask on at least part of the conductive film corresponding to the stepped portions of the first and second films, the first and second resist masks being simultaneously formed; dry-etching the conductive film through the first and second resist masks to form gate electrodes while leaving the conductive film on the stepped portions of the first and second films; and removing the first and second resist masks, wherein upon forming a gate or wiring electrode pattern on a substrate of a semiconductor element having a steep stepped portion, the patterning is performed by forming a pattern of a material for the gate or wiring electrode on the lower portion of the stepped portion or the lower and upper flat portions thereof so that the edge of the stepped portion is simultaneously included in the pattern, wherein a polysilicon film is formed within the groove on the grooved substrate for a semiconductor element and the stepped portion is formed from apart of the polysilicon film projecting from the upper portion of the groove and spreading over the surface of the substrate, and wherein a contact hole is formed through an interlayer insulating film arranged between the polycrystalline or amorphous silicon film in the groove and a wiring electrode other than the gate or wiring electrode to form an ohmic contact between the polycrystalline or amorphous silicon film and the wiring electrode. ### Claim 9 (depends on 8) The method of claim 8 wherein the patterning of the gate or wiring electrode is performed in a region including at least the lower portion of the contact hole on the upper portion of the polycrystalline or amorphous silicon film projecting from the upper portion of the groove and spreading over the surface of the substrate in a size similar to that of the contact hole. ### Claim 10 (depends on 8) The method of claim 8 wherein the patterning of the gate or wiring electrode is smaller than that of the contact hole. ### Claim 11 (depends on 8) The method of claim 8 wherein the patterning of the gate or wiring electrode is greater than that of the contact hole. ### Claim 12 A method of manufacturing a semiconductor device comprising the steps of: forming first and second films having stepped portions on first and second underlying films adjacent to another; forming a conductive film so that the first and second films having stepped portions are also covered; forming a first resist mask for forming gate electrodes on the conductive film and simultaneously forming a second resist mask on at least part of the conductive film corresponding to the stepped portions of the first and second films, the first and second resist masks being simultaneously formed; dry-etching the conductive film through the first and second resist masks to form gate electrodes while leaving the conductive film on the stepped portions of the first and second films; and removing the first and second resist masks, wherein upon forming a gate or wiring electrode pattern on a substrate of a semiconductor element having a steep stepped portion, the patterning is performed by forming a pattern of a material for the gate or wiring electrode on the lower portion of the stepped portion or the lower and upper flat portions thereof so that the edge of the stepped portion is simultaneously included in the pattern, wherein an amorphous silicon film is formed within the groove on the grooved substrate for a semiconductor element and the stepped portion is formed from part of the amorphous silicon film projecting from the upper portion of the groove and spreading over the surface of the substrate, and wherein a contact hole is formed through an interlayer insulating film arranged between the polycrystalline or amorphous silicon film in the groove and a wiring electrode other than the gate or wiring electrode to form an ohmic contact between the polycrystalline or amorphous silicon film and the wiring electrode. ### Claim 13 (depends on 12) The method of claim 12, wherein the patterning of the gate or wiring electrode is performed in a region including at least the lower portion of the contact hole on the upper portion of the polycrystalline or amorphous silicon film projecting from the upper portion of the groove and spreading over the surface of the substrate in a size smaller to that of the contact hole. ### Claim 14 (depends on 12) The method of claim 12, wherein the patterning of the gate or wiring electrode is smaller than that of the contact hole. ### Claim 15 (depends on 12) The method of claim 12, wherein the patterning of the gate or wiring electrode is greater than that of the contact hole.