# US 5,348,904 A · Method of fabricating semiconductor memory device including an improved substrate structure

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- Number: US 5,348,904 A
- Document ID: US5348904A
- Status: Granted
- Kind: A
- Application number: 07/993,382
- Filed: 1992-12-18
- Granted: 1994-09-20
- Earliest claimed: 1991-12-20
- Assignees: NEC Corporation
- Inventors: Kuniaki Koyama
- Web page: https://patentgrep.com/patent/US5348904A

## CPC

- H10B 12/01: {Manufacture or treatment}
- H10B 12/033: {the capacitor extending over the transistor}
- H10D 84/0133: {Manufacturing common source or drain regions between multiple IGFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- Y10S 438/981: Utilizing varying dielectric thickness
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The invention provides a semiconductor substrate structure for semiconductor integrated circuit devices including a memory cell array area involving both stacked capacitors and transistors and a peripheral circuit area involving transistors. A portion of the device in the memory cell area has a larger thickness than that of the peripheral circuit area. The transistors involved in the memory cell array area possess different properties from that of the transistors involved in the peripheral circuit area. The substrate structure has a surface region comprising a first impurity concentration region underlying a recessed portion in the memory cell array area and an opposite region having a second impurity concentration from that of the high impurity concentration region so that a surface in the memory cell area exists at a lower level than that of a surface in the peripheral area. The recessed portion makes difference in surface levels of the device reduced, resulting in fine patterns of photo-lithography promoting high integration. Both the first and second impurity concentrations are so determined as to allow the transistors involved in the both areas to exhibit best performances and an excellent properties respectively.

## Claims

### Claim 1

A method of forming a semiconductor substrate for a semiconductor integrated circuit device including a first multi-layer structure having a thickness formed in an array area and a second multi-layer structure formed in a peripheral area, said first structure being thicker than said second multi-layer structure, said method comprising the steps of:
forming a first insulation film over an entire surface of a semiconductor substrate having an impurity concentration of a first conductivity type, said substrate having an array area and a peripheral area;
selectively forming a second insulation film on said first insulation film in said peripheral area;
forming a well region in the surface of said substarate and in said array area by a selective ion-implantation of an impurity of a conductivity type which is opposite to the conductivity type of said substrate;
forming a high impurity concentration planar region in said well region by a selective ion-implantation of an impurity of a conductivity type which is the same conductivity type as the impurity as said substrate; and
forming a thick insulation film in said array area portion of said first insulation film so as to depress said high impurity concentration planar region; and
removing said first and second insulation films and said thick insulation film to form a recessed portion in said array area.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein said second insulation film is formed by the steps of:
depositing an insulation material on said first insulation film by using chemical vapor deposition; and
subjecting said insulation material to selective etching by using photo-resist pattern.

### Claim 3 (depends on 1)

The method as claimed in claim 1, wherein said thick insulation film is formed by thermal oxidation.

### Claim 4 (depends on 1)

The method as claimed in claim 1, wherein; said semiconductor substrate comprises silicon; said thick insulation film comprises silicon oxide; said first insulation film comprises silicon oxide; and said second insulation film comprises silicon nitride.