# US 5,348,900 A · Process for manufacturing a semiconductor device including heat treatment in ammonia or oxygen

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,348,900 A
- Document ID: US5348900A
- Status: Granted
- Kind: A
- Application number: 07/932,943
- Filed: 1992-08-21
- Granted: 1994-09-20
- Earliest claimed: 1991-10-11
- Assignees: Sharp Kabushiki Kaisha
- Inventors: Akitsu Ayukawa; Shigeo Onishi
- Web page: https://patentgrep.com/patent/US5348900A

## CPC

- H10P 30/204: {into Group IV semiconductors}
- H10D 30/0227: {having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET}
- H10P 30/212: {Through-implantation}
- H10P 30/214: {Recoil-implantation}
- H10P 30/28: characterised by an annealing step, e.g. for activation of dopants
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A process for manufacturing a semiconductor device, including the steps of: forming a oxide film over the entire surface of a semiconductor substrate formed with a gate electrode having side walls on opposite sides thereof with intervention of a gate oxide film, followed by implanting an impurity into a predetermined region; subjecting the substrate to a first heat treatment; removing the oxide film existing in the predetermined region; and subjecting the substrate to a second heat treatment in an ammonia or oxygen gas atmosphere.

## Claims

### Claim 1

A process for manufacturing a semiconductor device, comprising the steps of:
forming a gate oxide film over the entire surface of a semiconductor substrate;
forming a gate electrode on the gate oxide film;
forming an oxide film over the entire surface of the semiconductor substrate including the gate electrode;
using at least the gate electrode as a mask for implanting an impurity through the oxide film into a source/drain region;
subjecting the substrate to a first heat treatment;
removing the oxide film existing above the source/drain region; and
subjecting the substrate to a second heat treatment in an ammonia or oxygen gas atmosphere.

### Claim 2 (depends on 1)

A process as set forth in claim 1, wherein said impurity is arsenic ion.

### Claim 3 (depends on 1)

A process as set forth in claim 1, wherein said first heat treatment is conducted at about 750.degree.-850.degree. C. for about 30-60 minutes.

### Claim 4 (depends on 1)

A process as set forth in claim 1, wherein the removal of said oxide film is conducted by a reactive ion etching.

### Claim 5 (depends on 1)

A process as set forth in claim 1, wherein said oxide film existing over the source/drain region has a thickness of about 100-400 .ANG..

### Claim 6 (depends on 1)

A process as set forth in claim 1, wherein said second heat treatment is conducted in a Rapid Thermal Annealer at about 1000.degree.-1100.degree. C. for about 10-60 seconds in an ammonia gas atmosphere into which ammonia gas is introduced at a flow rate of about 3 to 6 liter/min.

### Claim 7 (depends on 1)

A process as set forth in claim 1, wherein said second heat treatment is conducted at about 800.degree.-900.degree. C. for about 10-30 minutes in an oxygen gas atmosphere into which oxygen gas is introduced at a flow rate of about 30-40 liter/min.