# US 5,348,897 A · Transistor fabrication methods using overlapping masks

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- Number: US 5,348,897 A
- Document ID: US5348897A
- Status: Granted
- Kind: A
- Application number: 07/984,666
- Filed: 1992-12-01
- Granted: 1994-09-20
- Earliest claimed: 1992-12-01
- Assignees: Paradigm Technology, Inc.
- Inventors: Ting-Pwu Yen
- Web page: https://patentgrep.com/patent/US5348897A

## CPC

- H10D 30/0316: {of lateral bottom-gate TFTs comprising only a single gate}
- H10B 10/00: Static random access memory [SRAM] devices
- H10B 10/125: {the MOSFET being a thin film transistor [TFT]}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- H10D 30/6717: {the source and the drain regions being asymmetrical}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

Transistor fabrication methods are provided which are suitable, for example, for transistors with current carrying elements above a semiconductor substrate. Only few mask alignments define critical dimensions such as the channel length of a MOS transistor. In one embodiment in which the channel region overlies the gate, a first mask is formed over the channel region, and then an LDD implant is carried out. A second mask is then formed over the LDD portion of the drain region. The second mask is allowed to extend over the first mask. A heavy doping implant is then carried out. Thus an LDD structure can be provided on the drain side but not on the source side with only one mask--the first mask--defining the channel length. In some embodiments, both masks include photoresist. The first photoresist mask is hardened to prevent its lifting during development of the resist of the second mask. Further, after the LDD implant, the first photoresist mask is outgassed to improve the adhesion of the second photoresist mask. In another embodiment, the second mask is used to pattern the first mask. The patterning etch undercuts the second mask. After the heavy doping implant, the second mask is removed, and the LDD implant is performed with the first mask masking the channel region.

## Claims

### Claim 1

A method for fabricating a transistor, said method comprising the steps of:
forming a gate of said transistor in or over a semiconductor substrate;
after said gate forming step, forming a semiconductor layer over said substrate, said semiconductor layer including a first region and a second region spaced from said first region, wherein one of said first and second regions is a source region of said transistor and the other one of said first and second regions is a drain region of said transistor, said semiconductor layer further comprising a channel region separating said first and second regions;
forming a first mask over said channel region;
introducing a dopant into said first and second regions;
forming a second mask over a portion of said first region which portion is adjacent said channel region; and
introducing a dopant into said second region and into a portion of said first region which portion is not overlain by said first and second masks.

### Claim 2 (depends on 1)

The method of claim 1 wherein said first region is the drain region of said transistor and said second region is the source region of said transistor.

### Claim 3 (depends on 1)

The method of claim 1 wherein said second mask extends over said first mask.

### Claim 4 (depends on 1)

The method of claim 1 wherein said second mask does not extend over said second region.

### Claim 5 (depends on 1)

The method of claim 1 wherein:
said first region portion adjacent said channel region extends over said gate; and
said first region portion not overlain by said first and second masks is laterally spaced from said gate.

### Claim 6 (depends on 1)

The method of claim 1 wherein said semiconductor layer comprises a layer of polycrystalline material.

### Claim 7 (depends on 1)

The method of claim 1 wherein said semiconductor layer comprises non-monocrystalline silicon.

### Claim 8 (depends on 1)

The method of claim 1 wherein said first mask comprises silicon.

### Claim 9 (depends on 1)

The method of claim 1 wherein said first mask comprises a dielectric.

### Claim 10 (depends on 1)

The method of claim 1 wherein said first mask comprises silicon dioxide.

### Claim 11 (depends on 1)

The method of claim 1 wherein said first mask comprises a photoresist.

### Claim 12 (depends on 11)

The method of claim 11 wherein:
said second mask comprises a photoresist; and
said step of forming a first mask comprises the step of hardening said first mask to impede damaging said first mask during said step of forming said second mask.

### Claim 13 (depends on 12)

The method of claim 12 wherein said hardening step comprises the step of heating said first mask.

### Claim 14 (depends on 12)

The method of claim 12 wherein said hardening step comprises the steps of:
placing said semiconductor substrate on a chuck;
heating said chuck; and
irradiating said first mask by ultraviolet light.

### Claim 15 (depends on 11)

The method of claim 11 wherein:
said second mask comprises a photoresist; and
said method further comprises, after said step of forming a first mask but before said step of forming a second mask, the step of processing said first mask to prevent lifting of said first mask during said step of forming said second mask.

### Claim 16 (depends on 11)

The method of claim 11 further comprising, after said step of introducing a dopant into said first and second regions but before said step of forming a second mask, the step of outgassing said first mask to improve adhesion of said second mask.

### Claim 17 (depends on 16)

The method of claim 16 wherein said second mask comprises a photoresist.

### Claim 18 (depends on 16)

The method of claim 16 wherein said outgassing step comprises the step of holding said first mask at a temperature of about 150.degree. C. and a pressure of about 5-10 torr.

### Claim 19 (depends on 17)

The method of claim 17 wherein said outgassing step comprises the step of heating said first mask.

### Claim 20 (depends on 19)

The method of claim 19 wherein said heating step is performed at a pressure below atmospheric pressure.

### Claim 21 (depends on 16)

The method of claim 16 wherein said outgassing step comprises the step of exposing said first mask to a pressure below atmospheric pressure.

### Claim 22 (depends on 11)

The method of claim 11 wherein said step of forming a second mask comprises the steps of:
depositing a photoresist over said first mask and over said first and second regions; and
removing a portion of the deposited photoresist by a process selective to said first mask.

### Claim 23 (depends on 1)

The method of claim 1 further comprising, before said step of introducing a dopant into said second region and into a portion of said first region, the step of forming a screen layer over said first and second regions such that said screen layer screens out contaminants during said step of introducing a dopant into said second region and into a portion of said first region.

### Claim 24 (depends on 23)

The method of claim 23 wherein said screen layer forming step precedes said step of forming a first mask, and said screen layer screens out contaminants during said step of introducing a dopant into said first and second regions.

### Claim 25

A method for forming a transistor having a first region, a second region of the same conductivity type as said first region, and a third region separating said first and second regions, said method comprising the steps of:
forming a first layer over said third region;
introducing a dopant of said conductivity type into said first and second regions while said first layer masks said third region;
forming a second layer over said first, second and third regions and over said first layer;
selectively removing a portion of said second layer so that a remaining portion of said second layer overlies a first portion of said first region which first portion is adjacent said third region: and
introducing a dopant of said conductivity type into a second portion of said first region and into said second region while said first and second layers mask said third region and said first portion of said first region, wherein:
one of said first and second regions is a source region of said transistor, the other one of said first and second regions is a drain region of said transistor, and said third region is a channel region of said transistor;
said first, second and third regions are regions of a semiconductor layer formed over a gate of said transistor;
each of said first and second regions extends over said gate; and
said second portion of said first region is laterally spaced from said gate.

### Claim 26

A method for doping a transistor having a first region, a second region and a third region separating said first and second regions, said method comprising the steps of:
forming a mask over said third region;
introducing a dopant into said first and second regions;
forming a conformal layer of material over said mask so as to completely cover said first, second and third regions; and
introducing a dopant into said first and second regions through said conformal layer while said conformal layer completely covers said first and second regions and while a portion of said conformal layer on sidewalls of said mask masks a portion of said first and second regions.

### Claim 27

A method for forming a memory cell comprising transistors T1, T2, T3 and T4, said method comprising the steps of:
forming said transistor T1 having electrodes S1 and D1 and a gate G1, and forming said transistor T2 having electrodes S2 and D2 and a gate G2;
forming over said transistors T1 and T2:
a first interconnect interconnecting said gate G1 and said electrode D2; and
a second interconnect interconnecting said gate G2 and said electrode D1;
forming an insulator over said first and second interconnects and said transistors T1 and T2;
forming contact openings in said insulator to allow electrical contact to said first and second interconnects;
forming a semiconductor layer over said insulator, said semiconductor layer contacting said first and second interconnects through said contact opening;
forming a first mask over portions CH3 and CH4 of said semiconductor layer wherein said portions CH3 and CH4 are channel regions of, respectively, said transistors T3 and T4;
introducing a dopant into portions S3, D3, S4, D4 of said semiconductor layer wherein one of said portions S3, D3 is a source region of said transistor T3 and the other one of said portions S3, D3 is a drain region of said transistor T3, and wherein one of said portions S4, D4 is a source region of said transistor T4 and the other one of said portions S4, D4 is a drain region of said transistor T4;
forming a second mask over a part of said region D3 which part is adjacent said channel region CH3 and over a part of said region D4 which part is adjacent said channel region CH4; and
introducing a dopant into said regions S3, S4 and into parts of said regions D3, D4 which parts are exposed by said first and second masks.

### Claim 28 (depends on 27)

The method of claim 27 wherein said second mask extends over said first mask.

### Claim 29

A method for fabricating a transistor, said method comprising the steps of:
forming a gate of said transistor in or over a semiconductor substrate;
after said gate forming step, forming a semiconductor layer over said substrate, said semiconductor layer including a first region and a second region spaced from said first region, wherein one of said first and second regions is a source region of said transistor and the other one of said first and second regions is a drain region of said transistor, said semiconductor layer further comprising a channel region separating said first and second regions;
forming a first mask over said channel region;
introducing a dopant into said first and second regions;
removing said first mask;
forming a second mask over said channel region and over a portion of said first region which portion is adjacent said channel region; and
introducing a dopant into said second region and into a portion of said first region which portion is not overlain by said second mask.