# US 5,348,892 A · Image sensor and method of manufacturing the same

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- Number: US 5,348,892 A
- Document ID: US5348892A
- Status: Granted
- Kind: A
- Application number: 07/936,837
- Filed: 1992-08-28
- Granted: 1994-09-20
- Earliest claimed: 1990-04-26
- Assignees: Fuji Xerox Co., Ltd.
- Inventors: Hiroyuki Miyake; Tsutomu Abe; Hisao Ito; Hiroyuki Hotta; Yasumoto Shimizu; Yoshihiko Sakai
- Web page: https://patentgrep.com/patent/US5348892A

## CPC

- H04N 25/41: {Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors}
- H04N 25/7013: {using abutted sensors forming a long line}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.

## Claims

### Claim 1

A method of manufacturing an image sensor of the type having photodetecting elements, each with a multilayered structure comprising a metal electrode, a photoconductive layer, and a transparent electrode; thin film transistor switching elements, each including a gate electrode, a source electrode, and a drain electrode; capacitors, each with a conductive layer sandwiched between an upper metal layer and a lower metal layer and each capacitor positioned between the photodetecting element and the thin film transistor switching element; and a group of wires, each passing between adjacent photodetecting elements, and meandering through a photodetecting element array in which the photodetecting elements are arrayed in lines in a main scan direction, where the photodetecting elements, thin film transistor switching elements, capacitors, and a groups of wires are formed on a single substrate, said method comprising the steps of:
forming the gate electrodes of the thin film transistors and the lower metal layers of the capacitors with a metal layer;
forming the metal electrodes of the photodetecting elements, the conductive layers of the capacitors, and the source and drain electrodes of the thin film transistor switching elements with a metal layer; and
forming the upper metal layers of the capacitors and the wire portions of the wire group with a metal layer.