# US 5,348,773 A · Threshold switching device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,348,773 A - Document ID: US5348773A - Status: Granted - Kind: A - Application number: 08/082,112 - Filed: 1993-06-28 - Granted: 1994-09-20 - Earliest claimed: 1991-05-02 - Assignees: Dow Corning Corporation - Inventors: Keith W. Michael; Udo C. Pernisz - Web page: https://patentgrep.com/patent/US5348773A ## CPC - H10N 70/021: {Formation of switching materials, e.g. deposition of layers} - G06N 3/063: using electronic means - H10B 63/82: {the switching components having a common active material layer} - H10N 70/20: Multistable switching devices, e.g. memristors - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/883: {Oxides or nitrides} - Y10T 428/265: 1 mil or less - Y10T 428/31678: Of metal - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS - H10B: ELECTRONIC MEMORY DEVICES - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes. ## Claims ### Claim 1 A method of forming a threshold switching device having negative differential resistance comprising depositing a film comprising silicon dioxide derived from hydrogen silsesquioxane resin between at least two electrodes and applying a direct current voltage above a threshold voltage for the film across the electrodes, wherein the film has a density between about 0.9 and about 2.1 g/cc. ### Claim 2 (depends on 1) The method of claim 1 wherein the silicon dioxide film is deposited by a process which comprises coating a substrate with a solution comprising a solvent and the hydrogen silsesquioxane resin, evaporating the solvent to form a preceramic coating and then pyrolyzing the preceramic coating. ### Claim 3 (depends on 2) The method of claim 2 wherein the preceramic coating is pyrolyzed at a temperature in the range of from about 100.degree. C. to about 600.degree. C. ### Claim 4 (depends on 1) The method of claim 1 wherein the device is placed in a non-oxidizing atmosphere before applying the voltage above the threshold voltage. ### Claim 5 (depends on 1) The method of claim 1 wherein the electrodes are made of a material selected from the group consisting of gold, aluminum, silver, copper, platinum, gallium arsenide, and silicon. ### Claim 6 (depends on 3) The method of claim 3 wherein the electrodes are made of gold. ### Claim 7 (depends on 1) The method of claim 1 wherein the silicon dioxide film is between about 50 and about 5000 nm thick. ### Claim 8 (depends on 9) The method of claim 9 wherein the silicon dioxide film is between about 100 and about 600 nm thick. ### Claim 9 (depends on 2) The method of claim 2 wherein the solution also contains platinum, rhodium or copper in an amount of about 5 to about 1000 ppm platinum, rhodium or copper based on the weight of hydrogen silsesquioxane resin. ### Claim 10 A method of forming a threshold switching device having negative differential resistance comprising depositing a film comprising silicon dioxide and one or more modifying ceramic oxides between at least two electrodes and applying a direct current voltage above a threshold voltage for the film across the electrodes, wherein the silicon oxide and a modifying ceramic oxide film is derived from hydrogen silsesquioxane resin and a modifying ceramic oxide precursor and wherein the film has a density between about 40 and about 95% of its theoretical density. ### Claim 11 (depends on 10) The method of claim 10 wherein the film is deposited by a process which comprises coating a substrate with a solution comprising a solvent, the hydrogen silsesquioxane resin and the modifying ceramic oxide precursor, evaporating the solvent to form a preceramic coating and then pyrolyzing the preceramic coating. ### Claim 12 (depends on 11) The method of claim 11 wherein the modifying ceramic oxide precursor comprises a compound containing one or more elements selected from the group consisting of iron, titanium, zirconium, aluminum, tantalum, vanadium, and niobium, wherein the compound contains at least one hydrolyzable substituent selected from the group consisting of alkoxy or acyloxy and the compound is present in an amount such that the film contains 0.1 to 30 percent by weight modifying ceramic oxide. ### Claim 13 (depends on 12) The method of claim 12 wherein the preceramic coating is pyrolyzed at a temperature in the range of from about 100.degree. to about 600.degree. C. ### Claim 14 (depends on 10) The method of claim 10 wherein the device is placed in a non-oxidizing atmosphere before applying the voltage above the threshold voltage. ### Claim 15 (depends on 10) The method of claim 10 wherein the electrodes are made of a material selected from the group consisting of gold, aluminum, silver, copper, platinum, gallium, arsenide, and silicon. ### Claim 16 (depends on 15) The method of claim 15 wherein the electrodes are made of gold. ### Claim 17 (depends on 10) The method of claim 10 wherein the film is between about 50 and about 5000 nm thick. ### Claim 18 (depends on 17) The method of claim 17 wherein the film is between about 100 and about 600 nm thick. ### Claim 19 (depends on 12) The method of claim 12 wherein the solution also contains platinum, rhodium or copper in an amount of about 5 to about 1000 ppm platinum, rhodium or copper based on the weight of hydrogen silsesquioxane resin.