# US 5,348,619 A · Metal selective polymer removal

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- Number: US 5,348,619 A
- Document ID: US5348619A
- Status: Granted
- Kind: A
- Application number: 07/940,101
- Filed: 1992-09-03
- Granted: 1994-09-20
- Earliest claimed: 1992-09-03
- Assignees: Texas Instruments Incorporated
- Inventors: Brynne K. Bohannon; Daniel J. Syverson
- Web page: https://patentgrep.com/patent/US5348619A

## CPC

- H10P 70/273: {the processing being a delineation of conductive layers, e.g. by RIE}
- H10P 50/287: {by chemical means}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.

## Claims

### Claim 1

A process for removal of metal etch byproducts from a semiconductor wafer comprising the following steps:
introducing HF into a chamber containing said wafer which includes non-water soluble byproducts thereon,
introducing N.sub.2 +xH.sub.2 O, where x is a real number, into said chamber; and
removing soluble byproduct from said wafer after performing the above steps.

### Claim 2 (depends on 1)

A process as recited in claim 1 where HF is anhydrous.

### Claim 3

A process for removing post etch metal silicate-containing residue from a metal structure comprising the following steps:
introducing vapor HF into a chamber containing said metal structure which includes non water soluble residue thereon;
passing a gas over water and introducing the result into said chamber; and
removing said post etch metal silicate-containing residue from said structure after performing the above steps.

### Claim 4 (depends on 1)

A process as recited in claim 1 wherein said HF is vapor HF made form aqueous HF.

### Claim 5 (depends on 1)

A process as recited in claim 1 which is performed within a wafer vapos phase cleaner.

### Claim 6

A process for removing sidewall polymer from the posts of a deformable mirror device comprising the following steps:
introducing HF into a chamber containing said device which includes non-water soluble byproducts thereon,
introducing N.sub.2 +xH.sub.2 O, where x is a real number, into said chamber; and
removing soluble byproduct from said device after performing the above steps.

### Claim 7 (depends on 6)

A process as recited in claim 6 which is performed within a vapor phase cleaner.

### Claim 8

A process for removing post etch residue from a metal structure comprising the following steps:
introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon;
introducing water vapor into said chamber; and
removing said post residue from said structure after performing the above steps.

### Claim 9 (depends on 8)

A process as recited in claim 8 wherein the removal of said post etch residue includes rinsing said structure with water.

### Claim 10

A process for removing post etch residue from a metal structure comprising the following steps:
introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon;
passing a gas over water and introducing the result into said chamber: and
removing said post etch residue from said structure after performing the above steps.

### Claim 11 (depends on 10)

A process as recited in claim 10 wherein the removal of said post etch residue includes rinsing said structure with water.

### Claim 12 (depends on 10)

A process as recited in claim 10 wherein said gas is nitrogen.

### Claim 13 (depends on 3)

A process as recited in claim 3 wherein said gas is nitrogen.

### Claim 14 (depends on 3)

A process as recited in claim 3 wherein the removal of said post etch residue includes rinsing said structure with water.