# US 5,348,595 A · Process for the preaparation of a Ti-Al intermetallic compound

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- Number: US 5,348,595 A
- Document ID: US5348595A
- Status: Granted
- Kind: A
- Application number: 08/052,413
- Filed: 1993-04-22
- Granted: 1994-09-20
- Earliest claimed: 1988-05-13
- Assignees: Nippon Steel Corporation
- Inventors: Toshihiro Hanamura; Ryuji Uemori; Mitsuru Tanino; Jin-ichi Takamura
- Web page: https://patentgrep.com/patent/US5348595A

## CPC

- C22C 14/00: Alloys based on titanium
- C22C: ALLOYS (treatment of alloys C21D, C22F)

## Abstract

A Ti-Al intermetallic compound is prepared from a mixture of about 40 to 52 atomic % Ti, about 48 to 60 atomic % Al, and 10 to 3000 atomic ppm of at least one of P, As, Se, or Te. The mixture is melted and then solidified. The solidified product is annealed to form a uniform microstructure.

## Claims

### Claim 1

A process for the preparation of Ti-Al intermetallic compound comprising:
forming a mixture consisting essentially of about 40 to 52 atomic % Ti, about 48 to 60 atomic % Al, and 10 to 3000 atomic ppm of at least one element selected from a group consisting of P, As, Se and Te;
melting said mixture to form a molten mixture;
solidifying said molten mixture to form a solidified product; and
annealing said solidified product in an inert gas atmosphere at a temperature between 900.degree. C. and 1000.degree. C. to form a uniform microstructure.

### Claim 2 (depends on 1)

A process according to claim 1 wherein said mixture consists essentially of 10 to 1000 atomic ppm of said at least one element.

### Claim 3 (depends on 1, 2)

A process according to claim 1 or 2 further comprising annealing at a temperature between 900.degree. C. and 1000.degree. C.

### Claim 4 (depends on 3)

A process according to claim 3 further comprising adding said at least one element selected from the group consisting of P, As, Se, and Te to said Ti and Al to form said mixture.

### Claim 5 (depends on 1, 2)

A process according to claim 1 or 2 wherein said inert gas is argon.

### Claim 6 (depends on 1, 2)

A process according to claim 1 or 2 further comprising:
prior to melting, locating said mixture in a vacuum having a pressure lower than 10.sup.-6 Torr;
replacing said vacuum with an inert gas atmosphere; and
carrying out said melting under said inert gas atmosphere.

### Claim 7 (depends on 6)

A process according to claim 6 further comprising:
melting said mixture to form said molten mixture having a temperature of 1400.degree. C. to 1500.degree. C.

### Claim 8 (depends on 1, 2)

A process according to claim 1 or 2 further comprising adding said at least one element selected from the group consisting of P, As, Se, and Te to said Ti and Al to form said mixture.

### Claim 9 (depends on 1, 2)

A process according to claim 1 or 2 wherein said element is P.

### Claim 10 (depends on 1, 2)

A process according to claim 1 or 2 wherein said element is As.

### Claim 11 (depends on 1, 2)

A process according to claim 1 or 2 wherein said element is Se.

### Claim 12 (depends on 1, 2)

A process according to claim 1 or 2 wherein said element is Te.

### Claim 13

A process for the preparation of a Ti-Al intermetallic compound comprising:
forming a mixture consisting essentially of about 40 to 52 atomic % Ti, about 48 to 60 atomic % Al, and 10 to 1000 atomic ppm of at least one element selected from a group consisting of P, As, Se, and Te by adding said at least one element to said Ti and Al;
locating said mixture in a vacuum having a pressure lower than 10.sup.-6 Torr;
replacing said vacuum with an inert gas atmosphere;
melting said mixture under said inert gas atmosphere to form a molten mixture having a temperature of 1400.degree. C. to 1500.degree. C.;
solidifying said molten mixture to form a solidified product;
annealing said solidified product in an inert gas atmosphere at a temperature of 900.degree. C. to 1000.degree. C. to form a uniform microstructure.

### Claim 14

A process for the preparation of a Ti-Al intermetallic compound comprising:
forming a mixture consisting essentially of about 40 to 52 atomic % Ti, about 48 to 60 atomic % Al, and 10 to 3000 atomic ppm of at least one element selected from a group consisting of P, As, Sc and Te by adding said at least one element to said Ti and Al;
melting said mixture to form a molten mixture;
solidifying said molten mixture to form a solidified product; and
annealing said solidified product in an inert gas atmosphere at a temperature between 900.degree. C. and 1000.degree. C. to form a uniform microstructure.
