# US 5,347,170 A · Semiconductor integrated circuit having a voltage stepdown mechanism > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,347,170 A - Document ID: US5347170A - Status: Granted - Kind: A - Application number: 07/943,538 - Filed: 1992-09-11 - Granted: 1994-09-13 - Earliest claimed: 1990-02-28 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Shigeyuki Hayakawa; Leiichi Yanagisawa - Web page: https://patentgrep.com/patent/US5347170A ## CPC - G05F 1/465: {Internal voltage generators for integrated circuits, e.g. step down generators} - G05F 3/24: wherein the transistors are of the field-effect type only (G05F3/205, G05F3/26, G05F3/30 take precedence) - H03K 17/302: {in field-effect transistor switches} - G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract The external power supply voltage applied to an external power supply terminal is supplied to an internal stepdown circuit and a switch circuit. The value of the external power supply voltage is detected by an external voltage detecting circuit, and if the value is greater than a predetermined value, the internal stepdown circuit operates, the external power supply voltage is stepped down by the internal stepdown circuit and supplied to an internal circuit as an internal power supply voltage. Alternatively, if the value of the external power supply voltage is smaller than the predetermined value, the internal stepdown circuit does not operate, and instead the switch circuit operates and the external power supply voltage is supplied via the switch circuit to the internal circuit as the internal power supply voltage. ## Claims ### Claim 1 A semiconductor integrated circuit comprising: an internal circuit having a node; means for receiving a supply voltage; voltage detecting means for detecting a value of the supply voltage; voltage stepdown means for operating in one of an active mode for stepping down the supply voltage to apply a voltage to the node and an inactive mode, the voltage stepdown means operating in either the active mode or in the inactive mode in response to the voltage detecting means; and means, responsive to the voltage detecting means, for switching the receiving means to the node at times when the voltage stepdown means is operating in the inactive mode. ### Claim 2 (depends on 1) A semiconductor integrated circuit according to claim 1 wherein the means for switching includes a MOSFET. ### Claim 3 (depends on 1) A semiconductor integrated according to claim 1, wherein the voltage detecting means includes means for generating a control signal that is concurrently provided to the voltage stepdown means and the means for switching. ### Claim 4 (depends on 1) A semiconductor integrated according to claim 1, wherein the voltage detecting means includes means for generating a first control signal provided to the voltage stepdown means and a second control signal provided to the means for switching. ### Claim 5 (depends on 4) A semiconductor integrated according to claim 4, wherein the voltage detecting means includes means for generating the first control signal so that the voltage stepdown means operates in the active mode when the supply voltage value is larger than a first voltage value and operates in the inactive mode when the supply voltage value is smaller than the first voltage value, and for generating the second control signal so that the means for switching, switches the receiving means to the node when the supply voltage value is smaller than a second voltage value larger than the first voltage value. ### Claim 6 A semiconductor integrated circuit, adapted for receiving a chip selection signal, comprising: an internal circuit having a node; means for receiving a supply voltage; voltage detecting means for detecting a value of the supply voltage to generate a control signal; first voltage stepdown means for operating in one of an active mode for stepping down the supply voltage to apply a voltage to the node, and an inactive mode, the first voltage stepdown means operating in either the active mode or in the inactive mode in response to the control signal and the chip selection signal; second voltage stepdown means for operating in one of an active mode for stepping down the supply voltage to apply a voltage to the node, and an inactive mode, the second voltage stepdown means operating in either the active mode or in the inactive mode in response to the control signal; and means, responsive to the voltage detecting means, for switching the receiving means to the node at times when the first and second voltage stepdown means are both operating in the inactive mode. ### Claim 7 (depends on 6) A semiconductor integrated circuit according to claim 6, wherein the means for switching includes a MOSFET. ### Claim 8 (depends on 6) A semiconductor integrated circuit according to claim 6, wherein the first and second voltage stepdown means have the same circuit construction, and the current supply capacity of the first voltage stepdown means is larger than that of the second voltage stepdown means. ### Claim 9 A semiconductor integrated circuit, adapted for receiving a chip selection signal, comprising: an internal circuit having a node; means for receiving a power supply voltage; voltage detecting means for detecting a value of the supply voltage to generate a first control signal to indicate whether the value of the supply voltage is less than a first predetermined value and a second control signal to indicate whether the value of the supply voltage is less than a second predetermined value; first voltage stepdown means for operating in one of an active mode for stepping down the supply voltage to apply a voltage to the node, and an inactive mode, the first voltage stepdown means operating in either the active mode or in the inactive mode in response to the first control signal and the chip selection signal; second voltage stepdown means for operating in one of an active mode for stepping down the supply voltage to apply a voltage to the node, and an inactive mode, the second voltage stepdown means operating in either the active mode or in the inactive mode in response to the first control signal; and means, responsive to the second control signal, for switching the receiving means to the node in response to the second control signal. ### Claim 10 (depends on 9) A semiconductor integrated circuit according to claim 9, wherein the means for switching includes a MOSFET. ### Claim 11 (depends on 9) A semiconductor integrated circuit according to claim 9, wherein the first and second voltage stepdown means have the same circuit construction, and the current supply capacity of the first voltage stepdown means is larger than that of the second voltage stepdown means. ### Claim 12 (depends on 9) A semiconductor integrated circuit according to claim 9, further comprising means for generating two voltages whose values are different from each other, and wherein the voltage detecting means includes first and second control signal generator circuits which compare the supply voltage value with the respective ones of the two voltages to generate the first and second control signals.